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公开(公告)号：US11858093B2
公开(公告)日：2024-01-02
申请号：US17555059
申请日：2021-12-17
发明人： Yanjun Zhao , Lihua Wang , Gaoliang Zhang , Guanwen Qian , Donghua Zuo , Jianfeng Cao , Guannan Sun
CPC分类号： B24D5/02 , B24D3/005 , B24D3/344 , B24D18/0009 , B24D18/0018 , C09K3/1436 , C09K3/1454
摘要： The present application relates to a composite binding agent grinding wheel, wherein a weight percentage of each raw material of the grinding wheel is: 45-65% of pretreatment abrasive, 8-20% of resin bonding agent, 5-12% of hexagonal boron nitride, 5-10% of silicon dioxide, 5-15% of ceramic powder, 6-12% of prealloy powder bonding agent, and 1-3% of boron powder. The composite binding agent super-hard grinding wheel prepared by the present application can achieve nano-level grinding surface quality when grinding epitaxial wafers, and the grinding wheel has strong self-sharpening and high sharpness. It has obvious advantages in the finishing of silicon carbide crystal epitaxial wafers, which can solve the current limitations of back thinning processing of silicon carbide crystal epitaxial wafers.
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公开(公告)号：US20230042029A1
公开(公告)日：2023-02-09
申请号：US17555059
申请日：2021-12-17
发明人： Yanjun Zhao , Lihua Wang , Gaoliang Zhang , Guanwen Qian , Donghua Zuo , Jianfeng Cao , Guannan Sun
摘要： The present application relates to a composite binding agent grinding wheel, wherein a weight percentage of each raw material of the grinding wheel is: 45-65% of pretreatment abrasive, 8-20% of resin bonding agent, 5-12% of hexagonal boron nitride, 5-10% of silicon dioxide, 5-15% of ceramic powder, 6-12% of prealloy powder bonding agent, and 1-3% of boron powder. The composite binding agent super-hard grinding wheel prepared by the present application can achieve nano-level grinding surface quality when grinding epitaxial wafers, and the grinding wheel has strong self-sharpening and high sharpness. It has obvious advantages in the finishing of silicon carbide crystal epitaxial wafers, which can solve the current limitations of back thinning processing of silicon carbide crystal epitaxial wafers.
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