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公开(公告)号：US11387376B2
公开(公告)日：2022-07-12
申请号：US17104585
申请日：2020-11-25
发明人： Jie Yang , Peiting Zheng , Xinyu Zhang , Hao Jin
IPC分类号： H01L31/068 , H01L31/0216
摘要： A solar cell and a photovoltaic module including the solar cell. The solar cell includes: a semiconductor substrate including a first surface and a second surface opposite to each other; a first dielectric layer located on the first surface; a first N+ doped layer located on a surface of the first dielectric layer; a first passivation layer located on a surface of the first N+ doped layer; a first electrode located on a surface of the first passivation layer; a second dielectric layer located on the second surface; a first P+ doped layer located on a surface of the second dielectric layer; a second passivation layer located on a surface of the first P+ doped layer; and a second electrode located on a surface of the second passivation layer.
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公开(公告)号：US11791426B1
公开(公告)日：2023-10-17
申请号：US17960687
申请日：2022-10-05
发明人： Jie Mao , Zhao Wang , Peiting Zheng , Jie Yang , Xinyu Zhang
IPC分类号： H01L31/0236 , H01L31/18 , H01L31/0216
CPC分类号： H01L31/02363 , H01L31/02168 , H01L31/1868
摘要： A photovoltaic cell is provided, including a substrate having a front surface with metal pattern regions and a rear surface, first pyramid structures in each metal pattern region, platform protrusion structures on the rear surface, a first tunneling layer and a first doped conductive layer on a portion of the front surface in a respective metal pattern region, and a second tunneling layer and a second doped conductive layer on the rear surface. A height of each first pyramid structure is greater than that of each platform protrusion structure. A one-dimensional dimension of a bottom portion of each first pyramid structure is less than that of each platform protrusion structure. A doping element type of the first doped conductive layer is the same as that of the substrate. A doping element type of the second doped conductive layer is different from that of the first doped conductive layer.
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公开(公告)号：US11588065B2
公开(公告)日：2023-02-21
申请号：US17834409
申请日：2022-06-07
发明人： Jie Yang , Peiting Zheng , Xinyu Zhang , Hao Jin
IPC分类号： H01L31/068 , H01L31/0216
摘要： A solar cell and a photovoltaic module including the solar cell. The solar cell includes: a semiconductor substrate including a first surface and a second surface opposite to each other; a first dielectric layer located on the first surface; a first N+ doped layer located on a surface of the first dielectric layer; a first passivation layer located on a surface of the first N+ doped layer; a first electrode located on a surface of the first passivation layer; a second dielectric layer located on the second surface; a first P+ doped layer located on a surface of the second dielectric layer; a second passivation layer located on a surface of the first P+ doped layer; and a second electrode located on a surface of the second passivation layer.
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公开(公告)号：US12113139B1
公开(公告)日：2024-10-08
申请号：US18531648
申请日：2023-12-06
发明人： Yuanfang Zhang , Peiting Zheng , Jie Yang , Xinyu Zhang
IPC分类号： H01L31/0224 , H01L31/0236
CPC分类号： H01L31/022441 , H01L31/02363
摘要： The solar cell includes a substrate having electrode regions and non-electrode regions alternatingly. The electrode regions have a first surface, the non-electrode regions have a second surface, and the first surface has a smaller roughness than the second surface. The solar cell further includes a first tunneling dielectric layer formed over the first surface, a first doped conductive layer arranged on a side of the first tunneling dielectric layer, a passivation layer formed over the second surface and the first doped conductive layer, and at least one first electrode. The at least one first electrode are arranged in the electrode regions, each of the at least one first electrode includes a connecting electrode formed over the electrode regions and multiple spot electrodes. The multiple spot electrodes are arranged below the connecting electrode and connected to the connecting electrode.
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公开(公告)号：US11837673B1
公开(公告)日：2023-12-05
申请号：US17960711
申请日：2022-10-05
发明人： Jie Mao , Zhao Wang , Peiting Zheng , Jie Yang , Xinyu Zhang
IPC分类号： H01L31/0236 , H01L31/048
CPC分类号： H01L31/02363 , H01L31/048
摘要： A photovoltaic cell is provided, including a substrate having a front surface with metal and non-metal pattern regions, first and second pyramid structures in each metal pattern region, third and fourth pyramid structures in each non-metal pattern region, a first tunneling layer and a first doped conductive layer on a portion of the front surface in a respective metal pattern region, and a second tunneling layer and a second doped conductive layer on a rear surface of the substrate. A dimension of a bottom portion of each first pyramid structure is greater than that of each second pyramid structure. A dimension of a bottom portion of each third pyramid structure is greater than that of each fourth pyramid structure. An area proportion of the first pyramid structures in the metal pattern region is greater than that of the third pyramid structures in a respective non-metal pattern region.
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公开(公告)号：US12015095B2
公开(公告)日：2024-06-18
申请号：US18098343
申请日：2023-01-18
发明人： Jie Yang , Peiting Zheng , Xinyu Zhang , Hao Jin
IPC分类号： H01L31/068 , H01L31/0216
CPC分类号： H01L31/0682 , H01L31/02167 , H01L31/02168
摘要： A solar cell and a photovoltaic module including the solar cell. The solar cell includes: a semiconductor substrate including a first surface and a second surface opposite to each other; a first dielectric layer located on the first surface; a first N+ doped layer located on a surface of the first dielectric layer; a first passivation layer located on a surface of the first N+ doped layer; a first electrode located on a surface of the first passivation layer; a second dielectric layer located on the second surface; a first P+ doped layer located on a surface of the second dielectric layer; a second passivation layer located on a surface of the first P+ doped layer; and a second electrode located on a surface of the second passivation layer.
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公开(公告)号：US11923468B1
公开(公告)日：2024-03-05
申请号：US17960711
申请日：2022-10-05
发明人： Jie Mao , Zhao Wang , Peiting Zheng , Jie Yang , Xinyu Zhang
IPC分类号： H01L31/0236 , H01L31/048
CPC分类号： H01L31/02363 , H01L31/048
摘要： A photovoltaic cell is provided, including a substrate having a front surface with metal and non-metal pattern regions, first and second pyramid structures in each metal pattern region, third and fourth pyramid structures in each non-metal pattern region, a first tunneling layer and a first doped conductive layer on a portion of the front surface in a respective metal pattern region, and a second tunneling layer and a second doped conductive layer on a rear surface of the substrate. A dimension of a bottom portion of each first pyramid structure is greater than that of each second pyramid structure. A dimension of a bottom portion of each third pyramid structure is greater than that of each fourth pyramid structure. An area proportion of the first pyramid structures in the metal pattern region is greater than that of the third pyramid structures in a respective non-metal pattern region.
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公开(公告)号：US11721783B2
公开(公告)日：2023-08-08
申请号：US17578868
申请日：2022-01-19
发明人： Jie Yang , Zhao Wang , Peiting Zheng , Xinyu Zhang , Hao Jin
IPC分类号： H01L31/20 , H01L31/0216 , H01L31/0224 , H01L31/18 , H01L31/0747
CPC分类号： H01L31/202 , H01L31/02167 , H01L31/022425 , H01L31/0747 , H01L31/1864 , H01L31/208
摘要： Provided is a solar cell and a method for manufacturing the same, the method includes: forming a doped layer on a surface of a semiconductor substrate, the doped layer having a first doping concentration of a doping element in the doped layer; depositing, on a surface of the doped layer, a doped amorphous silicon layer including the doping element; selectively removing at least one region of the doped amorphous silicon layer; performing annealing treatment, for the semiconductor substrate to form a lightly doped region having the first doping concentration and a heavily doped region having a second doping concentration in the doped layer, the second doping concentration is greater than the first doping concentration; and forming a solar cell by post-processing the annealed semiconductor substrate. The solar cell and the method for manufacturing the same simplify the manufacturing process and improve conversion efficiency of the solar cell.
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公开(公告)号：US11380807B2
公开(公告)日：2022-07-05
申请号：US17127828
申请日：2020-12-18
发明人： Menglei Xu , Jie Yang , Peiting Zheng , Xinyu Zhang , Hao Jin
IPC分类号： H01L31/0224 , H01L31/05
摘要： The present disclosure provides a back-contact solar cell and a solar cell module. The back-contact solar cell includes: a substrate including a light-receiving surface and a back surface opposite to the light-receiving surface, wherein the substrate includes a center region and connecting regions on opposite sides of the center region; positive electrodes and negative electrodes disposed on the back surface of the substrate; auxiliary positive electrodes, disposed on one or both of the light-receiving surface and a side surface of each of the connecting regions, and configured to be electrically coupled to the plurality of positive electrodes; and auxiliary negative electrodes, disposed on one or both of the light-receiving surface and the side surface of each of the connecting regions, and configured to be electrically coupled to the plurality of negative electrodes.
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公开(公告)号：US11784266B2
公开(公告)日：2023-10-10
申请号：US17504498
申请日：2021-10-18
发明人： Wenqi Li , Peiting Zheng , Jie Yang , Menglei Xu , Xinyu Zhang , Hao Jin
IPC分类号： H01L31/048 , H01L31/0216 , H01L31/18 , H01L31/0236
CPC分类号： H01L31/048 , H01L31/02167 , H01L31/1864 , H01L31/1868 , H01L31/02366
摘要： A solar cell includes a substrate having a front surface and a back surface opposite to the front surface; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed on the front surface of the substrate and in a direction away from the substrate; where the first passivation layer includes a dielectric material; the second passivation layer includes a first SiuNv material, and a value of v/u is 1.3≤v/u≤1.7; and the third passivation layer includes a SirOs material, and a value of s/r is 1.9≤s/r≤3.2; and a tunneling oxide layer and a doped conductive layer sequentially formed on the back surface of the substrate and in a direction away from the back surface; the doped conductive layer and the substrate are doped to have a same conductivity type.
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