公开(公告)号：US06221792B1

公开(公告)日：2001-04-24

申请号：US08881710

申请日：1997-06-24

Applicant: Yun-Yen Jack Yang ,  Ching-Hwa Chen ,  Yea-Jer Arthur Chen

Inventor： Yun-Yen Jack Yang ,  Ching-Hwa Chen ,  Yea-Jer Arthur Chen

IPC: H01L2144

CPC classification number: H01L21/76856 ,  H01L21/76843

Abstract: A nitridization process to form a barrier layer on a substrate is described. The nitridization process includes depositing a layer of metal or metal silicide on a surface of the substrate, placing the substrate into a high density, low pressure plasma reactor, introducing into the high density low pressure plasma reactor a gas including nitrogen, and striking a plasma in the high density, low pressure plasma reactor under conditions that promote nitridization of at least a portion of the layer of metal or metal silicide to produce a composition of metal nitride or metal silicon nitride, respectively.

Abstract translation: 描述了在衬底上形成阻挡层的氮化工艺。 氮化工艺包括在衬底的表面上沉积金属或金属硅化物层，将衬底放置在高密度，低压等离子体反应器中，将包含氮气的气体引入高密度低压等离子体反应器中， 在高密度低压等离子体反应器中，在促进至少一部分金属或金属硅化物层的氮化的条件下，分别产生金属氮化物或金属氮化硅的组合物。

公开(公告)号：US06080680A

公开(公告)日：2000-06-27

申请号：US994552

申请日：1997-12-19

Applicant: Changhun Lee ,  Yun-Yen Jack Yang

Inventor： Changhun Lee ,  Yun-Yen Jack Yang

IPC: H01L21/302 ,  G03F7/42 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/461

CPC classification number: G03F7/427 ,  H01L21/31138

Abstract: Methods and compositions for improving etch rate selectivity of photoresist to substrate material in a downstream microwave dry stripping process in the fabrication of semiconductor integrated (IC) circuits are provided. Significant improvement in selectivity is demonstrated with the addition of N.sub.2 to an etchant gas mixture of O.sub.2 and CF.sub.4.

Abstract translation: 提供了用于在制造半导体集成（IC）电路中的下游微波干剥离工艺中提高光致抗蚀剂对衬底材料的蚀刻速率选择性的方法和组合物。 通过向O2和CF4的蚀刻剂气体混合物中加入N2来证明选择性的显着改善。

公开(公告)号：US5968275A

公开(公告)日：1999-10-19

申请号：US882222

申请日：1997-06-25

Applicant: Changhun Lee ,  Vikram Singh ,  Yun-Yen Jack Yang

Inventor： Changhun Lee ,  Vikram Singh ,  Yun-Yen Jack Yang

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  C23C16/00

CPC classification number: H01L21/02071 ,  H01J37/32633 ,  H01L21/31138

Abstract: A plasma processing system configured for use in processing a substrate after metal etching. The substrate includes a layer of photoresist disposed thereon. The plasma processing system includes a plasma generating region and a baffle plate disposed between the plasma generating region and the substrate. The baffle plate includes a central blocked portion disposed in a center region of the baffle plate. The baffle plate further includes an annular porous portion surrounding the central blocked portion. The annular porous portion includes a plurality of through holes configured for permitting a H.sub.2 O plasma generated in the plasma generating region to pass through the holes to reach a surface of the substrate. The plasma processing system also includes a chuck disposed below the baffle plate to support the substrate during the processing.

Abstract translation: 一种等离子体处理系统，其配置用于在金属蚀刻之后处理衬底。 基板包括设置在其上的光致抗蚀剂层。 等离子体处理系统包括等离子体产生区域和设置在等离子体产生区域和衬底之间的挡板。 挡板包括设置在挡板中心区域的中央阻挡部分。 挡板还包括围绕中心阻塞部分的环形多孔部分。 环形多孔部分包括多个通孔，其构造成允许在等离子体产生区域中产生的H 2 O等离子体通过孔到达衬底的表面。 等离子体处理系统还包括设置在挡板下方以在处理期间支撑基板的卡盘。

公开(公告)号：US06209551B1

公开(公告)日：2001-04-03

申请号：US08873611

申请日：1997-06-11

Applicant: Chan-Syun David Yang ,  Yun-Yen Jack Yang

Inventor： Chan-Syun David Yang ,  Yun-Yen Jack Yang

IPC: H01L21302

CPC classification number: H01L21/02071

Abstract: Methods and compositions for treating a wafer's layer stack following metal etching are provided. The methods involve providing a semiconductor wafer layer stack in a plasma processing system following metal etch, and treating the layer stack with one or more process gases in a plasma processing system, where at least one of the process gases contains helium and water and/or oxygen, or comparable gases. The methods and compositions reduce corrosion and polymer fence for a wafer's layer stack relative to conventional passivation and strip processes without helium, decrease the time necessary for passivation, increase the strip rate, and/or improve strip uniformity.

Abstract translation: 提供了在金属蚀刻之后处理晶片层堆叠的方法和组合物。 所述方法包括在金属蚀刻之后的等离子体处理系统中提供半导体晶片层堆叠，以及在等离子体处理系统中用一种或多种工艺气体处理层叠层，其中至少一种处理气体包含氦和水和/或 氧气或类似气体。 相对于没有氦的常规钝化和剥离过程，这些方法和组合物减少了晶片层叠的腐蚀和聚合物栅栏，减少了钝化所需的时间，增加了带材速率和/或改善了带材均匀性。