公开(公告)号：US20050215019A1

公开(公告)日：2005-09-29

申请号：US10812433

申请日：2004-03-29

Applicant: Yu-Ren Wang ,  Ying Yen ,  Tony Liu

Inventor： Yu-Ren Wang ,  Ying Yen ,  Tony Liu

IPC: H01L21/00 ,  H01L21/336 ,  H01L21/84 ,  H01L29/78

CPC classification number: H01L29/6659 ,  H01L29/6656 ,  H01L29/7833

Abstract: A method of manufacturing a metal-oxide-semiconductor transistor is provided. A substrate having a gate structure thereon is provided. A source/drain extension region is formed in the substrate on each side of the gate structure. Thereafter, a carbon-containing material layer is formed over the substrate and then the carbon-containing material layer is etched back to form spacers on the sidewalls of the gate structure. Finally, a source/drain region is formed in the substrate on each side of the spacer-coated gate structure.

Abstract translation: 提供一种制造金属氧化物半导体晶体管的方法。 提供其上具有栅极结构的衬底。 在栅极结构的每一侧的衬底中形成源极/漏极延伸区域。 此后，在衬底上形成含碳材料层，然后将含碳材料层回蚀刻以在栅极结构的侧壁上形成间隔物。 最后，在间隔物涂覆的栅极结构的每一侧上的衬底中形成源/漏区。

公开(公告)号：US07037773B2

公开(公告)日：2006-05-02

申请号：US10812433

申请日：2004-03-29

Applicant: Yu-Ren Wang ,  Ying Yen ,  Tony E T Liu

Inventor： Yu-Ren Wang ,  Ying Yen ,  Tony E T Liu

IPC: H01L21/8238

CPC classification number: H01L29/6659 ,  H01L29/6656 ,  H01L29/7833

Abstract: A method of manufacturing a metal-oxide-semiconductor transistor is provided. A substrate having a gate structure thereon is provided. A source/drain extension region is formed in the substrate on each side of the gate structure. Thereafter, a carbon-containing material layer is formed over the substrate and then the carbon-containing material layer is etched back to form spacers on the sidewalls of the gate structure. Finally, a source/drain region is formed in the substrate on each side of the spacer-coated gate structure.