摘要:
A sample measurement method is a sample measurement method by an electron microscope and includes the film formation step of forming a sample on a projection on the major surface of a substrate, the electron beam irradiation step of irradiating the sample with an electron beam from a side of the projection, and the measurement step of detecting an electron beam which is generated or reflected from or has passed through the sample irradiated with the electron beam. Since the sample is formed on the projection on the major surface of the substrate, the sample on the projection can be formed as a thin film. For this reason, sample measurement can be executed only by irradiating the sample from a side of the projection.
摘要:
A sample measurement method is a sample measurement method by an electron microscope and includes the film formation step of forming a sample on a projection on the major surface of a substrate, the electron beam irradiation step of irradiating the sample with an electron beam from a side of the projection, and the measurement step of detecting an electron beam which is generated or reflected from or has passed through the sample irradiated with the electron beam. Since the sample is formed on the projection on the major surface of the substrate, the sample on the projection can be formed as a thin film. For this reason, sample measurement can be executed only by irradiating the sample from a side of the projection.
摘要:
A sputtering target for fluorescent thin-film formation comprising a matrix material and a luminescent center material, wherein said matrix material has a chemical composition represented by the following formula (1), and simultaneously satisfies conditions represented by the following inequalities (2) to (5). MIIvAxByOzSw (1) 0.05≦v/x≦5 (2) 1≦y/x≦6 (3) 0.01≦z/(z+w)≦0.85 (4) 0.6≦(v+x+3y/2)/(z+w)≦1.5 (5) wherein MII represents one or more elements selected from the group consisting of Zn, Cd and Hg, A represents one or more elements selected from the group consisting of Mg, Ca, Sr, Ba and rare earth elements, B represents one or more elements selected from the group consisting of Al, Ga and In, and v, x, y, z and w each represent numerical values satisfying the conditions specified in the inequalities (2) to (5).
摘要:
A sputtering target for fluorescent thin-film formation comprising a matrix material and a luminescent center material,wherein said matrix material has a chemical composition represented by the following formula (1), and simultaneously satisfies conditions represented by the following inequalities (2) to (5). MIIvAxByOzSw (1) 0.05≦v/x≦5 (2) 1≦y/x≦6 (3) 0.01≦z/(z+w)≦0.85 (4) 0.6≦(v+x+3y/2)/(z+w)≦1.5 (5) wherein MII represents one or more elements selected from the group consisting of Zn, Cd and Hg, A represents one or more elements selected from the group consisting of Mg, Ca, Sr, Ba and rare earth elements, B represents one or more elements selected from the group consisting of Al, Ga and In, and v, x, y, z and w each represent numerical values satisfying the conditions specified in the inequalities (2) to (5).
摘要:
An EL element 1 comprises EL functional layers 6, 10 comprising Ga2O3:Eu between a thick film insulator layer 16 and an upper electrode 12 provided on a substrate 2 on which a lower electrode 4 was formed and a light-emitting layer 8 comprising MgGa2O4 formed therebetween. The EL functional layers 6, 10 have the dual functions of insulating layers and electron doping layers. Due to this, the EL element 1 has a low drive voltage and high light-emitting brightness, and the structure of the EL element is simplified.
摘要翻译:EL元件1包括在厚膜绝缘体层16和设置在其上形成有下电极4的基板2上的上电极12之间包括Ga 2 O 3:Eu的EL功能层6,10,以及形成有包含MgGa 2 O 4的发光层8 之间。 EL功能层6,10具有绝缘层和电子掺杂层的双重功能。 由此,EL元件1具有低的驱动电压和高的发光亮度,并且EL元件的结构被简化。
摘要:
In a phosphor thin film comprising a matrix material and a luminescence center, the matrix material has the compositional formula: MIIvAxByOzSw wherein MII is Zn, Cd or Hg, A is Mg, Ca, Sr, Ba or rare earth element, B is Al, Ga or In, and atomic ratios v, x, y, z and w are 0.005≦v≦5, 1≦x≦5, 1≦y≦15, 0
摘要翻译:在包含基质材料和发光中心的磷光体薄膜中,基质材料具有以下组成式:M II B 其中M II是Zn,Cd或Hg,A是Mg,Ca,Sr, Ba或稀土元素,B为Al,Ga或In,原子比v,x,y,z和w为0.005 <= v <= 5,1 <= x <= 5,1 <= y <= 15 ,0
摘要:
The present invention aims at providing a phosphor thin film capable of realizing a light-emitting device attaining an excellent response, favorable color purity, and emission with a high luminance; and an EL panel including the same. The EL panel including the phosphor thin film of the present invention comprises a substrate, and a lower electrode, an insulating layer, an EL phosphor laminate thin film, and an upper electrode which are successively laminated on the substrate. In the EL phosphor laminate thin film, buffer thin films are formed on both sides of a phosphor thin film comprising a matrix material which is essentially constituted by magnesium gallate and doped with a rare-earth element or the like, and electron injection thin films are further formed on both sides thereof.
摘要:
An EL element 1 comprises EL functional layers 6, 10 comprising Ga2O3:Eu between a thick film insulator layer 16 and an upper electrode 12 provided on a substrate 2 on which a lower electrode 4 was formed and a light-emitting layer 8 comprising MgGa2O4 formed therebetween. The EL functional layers 6, 10 have the dual functions of insulating layers and electron doping layers. Due to this, the EL element 1 has a low drive voltage and high light-emitting brightness, and the structure of the EL element is simplified.
摘要翻译:EL元件1包括在厚膜绝缘体层16和设置在基板2上的上电极12之间的包括Ga 2 O 3/3 Eu的EL功能层6,10 其中形成有下电极4和在其间形成的包含MgGa 2 O 4 O 4的发光层8。 EL功能层6,10具有绝缘层和电子掺杂层的双重功能。 由此,EL元件1具有低的驱动电压和高的发光亮度,并且EL元件的结构被简化。
摘要:
The present invention aims at realizing a phosphor thin film having a high luminance with a low emission threshold voltage, and an EL element comprising the same. The EL element of the present invention comprises a substrate, and a lower electrode, a lower buffer thin film containing a sulfide such as ZnS, a phosphor thin film containing an oxide such as a gallate as a matrix material, an upper buffer thin film containing a sulfide such as ZnS, and an upper electrode which are successively laminated on the substrate.
摘要:
Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other.