公开(公告)号：US20110315996A1

公开(公告)日：2011-12-29

申请号：US13057136

申请日：2009-07-29

Applicant: Yong Jin Kim ,  Dong Kun Lee ,  Doo Soo Kim

Inventor： Yong Jin Kim ,  Dong Kun Lee ,  Doo Soo Kim

IPC: H01L29/12 ,  H01L21/20 ,  H01L33/62

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/3081 ,  H01L33/007 ,  H01L33/382

Abstract: Disclosed are a semiconductor device, a light emitting device, and a method of manufacturing the same. The semiconductor device includes a substrate, a plurality of rods aligned on the substrate, a metal layer disposed on the substrate between the rods, and a semiconductor layer disposed on and between the rods. Electrical and optical characteristics of the semiconductor device are improved due to the metal layer.

Abstract translation: 公开了一种半导体器件，发光器件及其制造方法。 半导体器件包括衬底，在衬底上对准的多个杆，设置在杆之间的衬底上的金属层和设置在杆之间和之间的半导体层。 由于金属层，半导体器件的电气和光学特性得到改善。

公开(公告)号：US20080290347A1

公开(公告)日：2008-11-27

申请号：US12124080

申请日：2008-05-20

Applicant: Yong Jin Kim ,  Dong Kun Lee

Inventor： Yong Jin Kim ,  Dong Kun Lee

IPC: H01L29/20

CPC classification number: C30B29/406 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02439 ,  H01L21/0254 ,  H01L21/02658

Abstract: The present invention provides to a gallium nitride (GaN) semiconductor and a method of manufacturing the same, capable of reducing crystal defects caused by a difference in lattice parameters, and minimizing internal residual stress. In particular, since a high-quality GaN thin film is formed on a silicon wafer, manufacturing costs can be reduced by securing high-quality wafers with a large diameter at a low price, and applicability to a variety of devices and circuit can also be improved.

Abstract translation: 本发明提供一种氮化镓（GaN）半导体及其制造方法，其能够减少由晶格参数的差异引起的晶体缺陷，并使内部残余应力最小化。 特别地，由于在硅晶片上形成高质量的GaN薄膜，所以可以通过以较低的价格确保大直径的高品质晶片来降低制造成本，并且适用于各种器件和电路也可以 改进。

公开(公告)号：US09425352B2

公开(公告)日：2016-08-23

申请号：US13057136

申请日：2009-07-29

Applicant: Yong Jin Kim ,  Dong Kun Lee ,  Doo Soo Kim

Inventor： Yong Jin Kim ,  Dong Kun Lee ,  Doo Soo Kim

IPC: H01L33/12 ,  H01L21/02 ,  H01L21/308 ,  H01L33/00 ,  H01L33/38

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/3081 ,  H01L33/007 ,  H01L33/382

Abstract: Disclosed are a semiconductor device, a light emitting device, and a method of manufacturing the same. The semiconductor device includes a substrate, a plurality of rods aligned on the substrate, a metal layer disposed on the substrate between the rods, and a semiconductor layer disposed on and between the rods. Electrical and optical characteristics of the semiconductor device are improved due to the metal layer.

Abstract translation: 公开了一种半导体器件，发光器件及其制造方法。 半导体器件包括衬底，在衬底上对准的多个杆，设置在杆之间的衬底上的金属层和设置在杆之间和之间的半导体层。 由于金属层，半导体器件的电气和光学特性得到改善。

公开(公告)号：US07615470B2

公开(公告)日：2009-11-10

申请号：US11302957

申请日：2005-12-13

Applicant: Yong Jin Kim ,  Dong Kun Lee

Inventor： Yong Jin Kim ,  Dong Kun Lee

IPC: H01L21/322

CPC classification number: C30B29/406 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02439 ,  H01L21/0254 ,  H01L21/02658

Abstract: The present invention provides to a gallium nitride (GaN) semiconductor and a method of manufacturing the same, capable of reducing crystal defects caused by a difference in lattice parameters, and minimizing internal residual stress. In particular, since a high-quality GaN thin film is formed on a silicon wafer, manufacturing costs can be reduced by securing high-quality wafers with a large diameter at a low price, and applicability to a variety of devices and circuit can also be improved.

Abstract translation: 本发明提供一种氮化镓（GaN）半导体及其制造方法，其能够减少由晶格参数的差异引起的晶体缺陷，并使内部残余应力最小化。 特别地，由于在硅晶片上形成高质量的GaN薄膜，所以可以通过以较低的价格确保大直径的高品质晶片来降低制造成本，并且适用于各种器件和电路也可以 改进。