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公开(公告)号:US12046789B1
公开(公告)日:2024-07-23
申请号:US18648408
申请日:2024-04-28
申请人: Xidian University
发明人: Jiajia Liao , Min Liao , Maliang Liu , Ziyu Wang , Yunpeng Li , Yichun Zhou
摘要: A ferroelectric film phase shifter includes a substrate layer; an isolated signal layer located on the substrate layer; first, second and third top transmission line electrodes distributed on the isolated signal layer at intervals; the first and second top transmission line electrodes located at both ends of the isolated signal layer, and the third top transmission line electrode located on a middle region of the isolated signal layer; a bottom transmission line electrode located in the isolated signal layer; an intermediate transmission line structure located in a middle region of the bottom transmission line electrode and adjacent to the third top transmission line electrode; MIM hafnium oxide-based ferroelectric capacitor structures located at two ends of the bottom transmission line electrode; and metal transmission line structures located between each MIM hafnium oxide-based ferroelectric capacitor structure and each of the first top transmission line electrode and the second top transmission line electrode.