Photolithographically-patterned variable capacitor structures and method of making
    1.
    发明申请
    Photolithographically-patterned variable capacitor structures and method of making 失效
    光刻图案可变电容器结构及其制造方法

    公开(公告)号:US20020080554A1

    公开(公告)日:2002-06-27

    申请号:US09975358

    申请日:2001-10-11

    CPC classification number: H01G5/16 H01G5/18

    Abstract: A new type of high-Q variable capacitor includes a substrate, a first electrically conductive layer fixed to the substrate, a dielectric layer fixed to a portion of the electrically conductive layer, and a second electrically conductive layer having an anchor portion and a free portion. The anchor portion is fixed to the dielectric layer and the free portion is initially fixed to the dielectric layer, but is released from the dielectric layer to become separated from the dielectric layer, and wherein an inherent stress profile in the second electrically conductive layer biases the free portion away from the a dielectric layer. When a bias voltage is applied between the first electrically conductive layer and the second electrically conductive layer, electrostatic forces in the free portion bend the free portion towards the first electrically conductive layer, thereby increasing the capacitance of the capacitor.

    Abstract translation: 一种新型的高Q可变电容器包括:衬底,固定到衬底的第一导电层,固定到导电层的一部分的电介质层;以及第二导电层,具有锚固部分和自由部分 。 锚固部分​​固定在电介质层上,自由部分最初固定在电介质层上,但是从电介质层释放出来,与电介质层分离,其中第二导电层中的固有应力分布使 远离电介质层的自由部分。 当在第一导电层和第二导电层之间施加偏置电压时,自由部分中的静电力将自由部分弯曲朝向第一导电层,从而增加电容器的电容。

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