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公开(公告)号：US20210091262A1
公开(公告)日：2021-03-25
申请号：US16961259
申请日：2019-07-16
发明人： Xingen WU , Junxian LI , Yingce LIU , Zhendong WEI , Hongyi ZHOU
摘要： A semiconductor chip of a LED and a manufacturing method thereof are disclosed. The semiconductor chip includes a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, and at least one semiconductor exposing portion extending from the P-type semiconductor layer to the N-type semiconductor layer. The semiconductor chip further includes one or more current blocking layers, a transparent conductive layer, an N-type electrode, and a P-type electrode, wherein the current blocking layer encapsulates the P-type semiconductor in such a manner to be stacked on the P-type semiconductor layer. The transparent conductive layer has one or more through holes corresponding to the one or more current blocking layers respectively. The N-type electrode is stacked on the N-type semiconductor layer and the P-type electrode is stacked on the N-type semiconductor layer. The P-type prongs of the P-type electrode are retained in the through holes of the transparent conductive layer respectively.
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公开(公告)号：US20210343904A1
公开(公告)日：2021-11-04
申请号：US16625768
申请日：2019-08-14
发明人： Yingce LIU , Zhao LIU , Junxian LI , Zhendong WEI , Xingen WU
摘要： A flip light emitting chip and a manufacturing method thereof are disclosed, wherein the flip light emitting chip comprises an N-type semiconductor layer, an active region, a P-type semiconductor layer, a reflective layer, a barrier layer, a bonding layer, a first insulating layer, an extended electrode layer, a second insulating layer, an N-type electrode, and a P-type electrode sequentially grown from a substrate. The first insulating layer has at least one first channel and at least one second channel. A first extended electrode portion and a second extended electrode portion of the extended electrode layer are respectively formed on the first insulating layer and extended to the N-type semiconductor layer via the first channel and to the barrier layer via the second channel. The second insulating layer has at least one third channel and at least one fourth channel. The N-type electrode extends to the first extended electrode portion through the third channel and the P-type electrode extends to the second extended electrode portion through the fourth channel.
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3.发明申请公开(公告)号：US20200251632A1
公开(公告)日：2020-08-06
申请号：US16626517
申请日：2018-07-31
发明人： Xingen WU , Yingce LIU , Junxian LI , Qilong WU
摘要： A flip-chip of light emitting diode includes at least one reflective layer, at least one N-type electrode, at least one P-type electrode, at least one distributed Bragg reflector, and an epitaxial unit. The epitaxial unit includes a substrate, an N-type layer, an active layer, and a P-type layer, wherein the substrate, the N-type layer, the active layer, and the P-type are sequentially stacked. The epitaxial unit has at least one N-type layer exposed portion, which is extended from the outer side surface of the P-type layer to the N-type layer via the active layer. The at least one reflective layer is formed on the P-type layer, wherein the at least one distributed Bragg reflector is integrally bonded to the N-type layer, the active layer, the P-type layer, and the at least one reflective layer. The at least one N-type electrode is electrically connected with the N-type layer and the at least one P-type electrode is electrically connected with the P-type layer.
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公开(公告)号：US20200251616A1
公开(公告)日：2020-08-06
申请号：US16680483
申请日：2019-11-11
发明人： Yingce LIU , Junxian LI , Zhao LIU , Zhendong WEI , Xuan HUANG
摘要： A light-emitting diode (LED) sub-chip and a method of producing the same are provided. The LED sub-chip comprises an epitaxial layer disposed on a growth substrate, where the epitaxial layer comprises a plurality of electrodes. The groove disposed between the LED sub-chip and a second LED sub-chip, where the groove penetrates through the epitaxial layer separating the two sub-chips. The bridge insulating layer at least partially covering a sidewall of the groove, where the sidewall comprises a first surface and a second surface above the first surface, where the texture of the second surface is less granular than a texture of the first surface. The bridge electrode on the bridge insulating layer, where the bridge electrode connects respective electrodes of the two sub-chips at the first surface.
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5.发明申请公开(公告)号：US20200176635A1
公开(公告)日：2020-06-04
申请号：US16624930
申请日：2018-07-30
发明人： Zhendong WEI , Junxian LI , Qilong WU , Yingce LIU , Hongyi ZHOU
摘要： A LED chip includes a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, a transparent electric conductive layer, and a passivation protective layer stacked with each other in sequence. The passivation protective layer has a plurality holes corresponding to different positions of the transparent electric conductive layer respectively. A P-type electrode is electrically linked with the transparent electric conductive layer through said plurality of holes, while to an N-type electrode is electrically linked with said N-type semiconductor layer.
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公开(公告)号：US20220302352A1
公开(公告)日：2022-09-22
申请号：US17832558
申请日：2022-06-03
发明人： Yingce LIU , Junxian LI , Zhao LIU , Xuan HUANG , Xingen WU
摘要： A mini LED chip and a manufacturing method thereof are provided. The mini LED chip includes a growth substrate and a light-emitting epitaxial layer including a first type semiconductor layer, a luminous layer, and a second type semiconductor layer. The second type semiconductor layer and the luminous layer include an electrode contact hollow part that exposes the first type semiconductor layer. Further, the mini LED chip includes a transparent conductive layer disposed on a side of the second type semiconductor layer facing away from the growth substrate, an extended electrode disposed on a side of the transparent conductive layer facing away from the growth substrate, an insulating and isolating reflection layer covering the electrode contact hollow part and an exposed surface of the transparent conductive layer and the extended electrode facing away from the growth substrate, and a first bonding electrode and a second bonding electrode.
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公开(公告)号：US20210336089A1
公开(公告)日：2021-10-28
申请号：US16626516
申请日：2019-07-30
发明人： Xingen WU , Yingce LIU , Junxian LI , Zhendong WEI
摘要： A semiconductor light emitting chip includes a substrate and an N-type semiconductor layer sequentially developed from the substrate, an active region, a P-type semiconductor layer, a reflective layer, at least two insulating layers, an anti-diffusion layer and an electrode set. One of the insulating layers is extended to surround the inner peripheral portion of the reflective layer, and another the insulating layer is extended to surround the outer peripheral portion of the reflective layer, such that the insulating layer isolates the anti-diffusion layer from the P-type semiconductor layer. The electrode set includes an N-type electrode and a P-type electrode, wherein the N-type electrode is electrically connected to the N-type semiconductor layer, and the P-type electrode is electrically connected to the P-type semiconductor layer.
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公开(公告)号：US20200020830A1
公开(公告)日：2020-01-16
申请号：US16472187
申请日：2017-10-07
发明人： Yingce LIU , Bin SONG , Junxian LI , Qilong WU , Yang WANG , Kaixuan CHEN , Zhendong WEI , Xingen WU , Hongyi ZHOU , Lihe CAI , Xinmao HUANG , Zhiwei LIN , Yongtong LI , Qimeng LYU , Hexun CAI , Gengcheng LI
摘要： A light-emitting diode (LED) chip (2) comprises a substrate (20), an epitaxial structure (21), a transparent conductive layer (22), a passivation protective layer (23), and at least one electrode (25). The epitaxial structure (21) is disposed on the substrate (20). The transparent conductive layer (22) is disposed on the epitaxial structure (21). The transparent conductive layer (22) defines one or more first through holes (220) that extend through the transparent conductive layer (22). The passivation protective layer (23) is disposed on the transparent conductive layer (22). The passivation protective layer (23) defines one or more second through holes (230) that extend through the passivation protective layer (23). The electrode (25) is disposed on the passivation protective layer (23). The electrode (25) electrically connects the transparent conductive layer (11) through the one or more second through holes (230).
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公开(公告)号：US20190221709A1
公开(公告)日：2019-07-18
申请号：US16220264
申请日：2018-12-14
发明人： Zhiwei LIN , Kaixuan CHEN , Junxian LI , Xiangjing ZHUO , Qilong WU
摘要： A light-emitting diode (LED) device and a method of producing the same are provided. The LED device comprises a first conductive layer, a second conductive layer, an active layer sandwiched between the first conductive layer and the second conductive layer and a first electrode in electrical contact with the first conductive layer. The first conductive layer has a laminate structure comprising a first conductive sub-layer, a current blocking layer, and a second conductive sub-layer. The first electrode comprises a first extended electrode in electrical contact with the first conductive sub-layer, and a second extended electrode in electrical contact with the second conductive sub-layer. The first conductive sub-layer and the second conductive sub-layer may have different depths.
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