公开(公告)号：US11349034B2

公开(公告)日：2022-05-31

申请号：US16679343

申请日：2019-11-11

申请人： XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.

发明人： Kyeongill Yoon ,  Yongchul Oh

IPC分类号： H01L29/66 ,  H01L29/786 ,  H01L29/423 ,  H01L29/78

摘要： A structure of a protruding gate transistor is disclosed. The protruding gate transistor comprising a substrate, a source region, a drain region, a channel extension anchor, a channel layer, and gate structure. The gate structure comprising a gate insulator layer, and a gate conductor layer. The channel layer is formed to be protruding from the substrate to extend the length of the channel of the protruding gate transistor and alleviate from channel length modulation.