公开(公告)号：US10459296B2

公开(公告)日：2019-10-29

申请号：US15910600

申请日：2018-03-02

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Bingkun Yin ,  Wanting Yin ,  Cong Tan ,  Hung-ming Shen

IPC: G02F1/1339 ,  G02F1/1335 ,  G02F1/1368

Abstract: The present invention provides a curved display device and a display panel thereof. The display panel includes a CF substrate, a TFT substrate, a plurality of photo spacers, a liquid crystal layer and a sealing layer. The liquid crystal layer is located between the CF and the TFT substrates, the plurality of photo spacers is disposed on a surface of the CF substrate facing the TFT substrate, the sealing layer is disposed between the CF and the TFT substrates and surrounds an edge of the liquid crystal layer, the liquid crystal layer includes an intermediate region and two edge regions located at two sides of the intermediate region, a stress generated from the photo spacers located in the intermediate region on the liquid crystals in the intermediate region is smaller than that generated from the photo spacers located in the edge regions on the liquid crystals in the edge regions.

公开(公告)号：US10217848B2

公开(公告)日：2019-02-26

申请号：US15303047

申请日：2016-06-12

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Wanghua Tu ,  Wanting Yin

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/266 ,  H01L21/265

Abstract: A thin film transistor (TFT) structure is provided herein, which comprises a substrate, a light-shielding resin, a polysilicon, a gate electrode insulator, a gate electrode, an interlayer dielectric layer, a source electrode, and a drain electrode. The light-shielding resin has functions of light-shielding and insulation. With doping through two through holes at two sides, the manufacturing process is simplified, the exposure process is simplified, the production time is shortened, the usage of masks is decreased, and the production cost is lowered.

公开(公告)号：US10020382B1

公开(公告)日：2018-07-10

申请号：US15310140

申请日：2016-09-18

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Xiaodan Hao ,  Wanting Yin

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  G02F1/1368 ,  H01L21/225 ,  G02F1/1362

Abstract: The present disclosure proposes a method of manufacturing a low temperature poly-silicon array substrate, an array substrate and a display panel. The method includes: disposing a substrate, and forming a buffer layer on the substrate; depositing first gas mixture and doped ionized gas by using vapor deposition to form a doped amorphous silicon thin film on the buffer layer; depositing second gas mixture by using vapor deposition to dehydrogenate the amorphous silicon thin film; performing an annealing treatment to the amorphous silicon thin film being dehydrogenated to diffuse dopant ions so as to form a polysilicon layer; and patterning the polysilicon layer.