公开(公告)号：US20180364503A1

公开(公告)日：2018-12-20

申请号：US15535656

申请日：2017-04-07

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Cheng CHEN ,  Liang MA

IPC: G02F1/136 ,  H01L27/12 ,  H01L29/06 ,  H01L29/786 ,  H01L29/66

Abstract: The present invention provides a TFT array substrate, comprising a substrate and a TFT switch formed on the substrate, and the TFT switch comprises a polysilicon layer, a gate, a first lightly doped region and a heavily doped region, and the polysilicon layer comprises two opposite extending sections and a main section connecting ends of the two extending sections, and the gate is disposed across the two extending sections, and the heavy doped region is formed in the main section of the polysilicon layer and at one side of the gate, and the first lightly doped region is formed at the middle of the heavily doped region.