公开(公告)号：US11418027B1

公开(公告)日：2022-08-16

申请号：US17225096

申请日：2021-04-07

申请人： Winbond Electronics Corp.

发明人： Nai Sheng Wu ,  Chao-Lung Wang

IPC分类号： H02H9/04 ,  H01L27/02

摘要： An electrostatic discharge protection circuit including a silicon controlled rectifier and a transistor is provided. The silicon controlled rectifier includes a first end, a second end, and a third end. The first end of the silicon controlled rectifier is coupled to a first pad. The second end of the silicon controlled rectifier is coupled to a second pad. The transistor includes a first end, a second end, and a control end. The first end of the transistor is coupled to the first pad. The second end of the transistor is coupled to the second pad. The control end of the transistor is coupled to the third end of the silicon controlled rectifier.

公开(公告)号：US11557896B1

公开(公告)日：2023-01-17

申请号：US17411020

申请日：2021-08-24

申请人： Winbond Electronics Corp.

发明人： Nai Sheng Wu ,  Chao-Lung Wang ,  Chia-Lung Lin

IPC分类号： H02H9/04 ,  H01L27/02

摘要： Provided is an electrostatic discharge protection circuit, including a first resistor, a first transistor, a second resistor, and a second transistor. The first resistor has a first end coupled to a first power rail. The first transistor has a first end coupled to the first power rail, and a control end of the first transistor is coupled to a second end of the first resistor. The second resistor is coupled between a second end of the first transistor and a second power rail. The second transistor has a first end coupled to the first power rail, a control end of the second transistor is coupled to the second end of the first transistor, and a second end of the second transistor is coupled to the second power rail.