公开(公告)号：US08522525B2

公开(公告)日：2013-09-03

申请号：US11719944

申请日：2005-11-12

Applicant: Werner Goetz ,  Oliver Schmidt

Inventor： Werner Goetz ,  Oliver Schmidt

IPC: F04D31/00 ,  F02C7/12 ,  F02C1/00 ,  F02K99/00

CPC classification number: F02C7/16 ,  F05D2260/205 ,  F05D2260/232 ,  F05D2260/60 ,  Y02T50/675

Abstract: A device and method for drawing off and recirculating cooling streams, specifically for drawing off and recirculating a cooling stream of fuel for cooling at least one aircraft engine accessory, is disclosed. The device having a tubular jacket part defining a flow cross-section through which a primary stream, specifically a fuel stream, flows by way of an extraction pipe which is positioned approximately in the center of the flow cross-section, or jacket part, in order to draw off a cooling stream from the primary stream, by way of a hollow strut extending in the radial direction to divert this cooling stream from the device with the aid of the extraction pipe and to supply it to at least one accessory to be cooled, and by way of a return opening to recirculate the cooling stream directed through the accessory for cooling purposes to the primary stream.

Abstract translation: 公开了一种用于抽出和循环冷却流的装置和方法，特别是用于抽出和再循环用于冷却至少一个飞机发动机附件的燃料的冷却流。 该装置具有限定流动截面的管状套管部分，主流体，特别是燃料流通过该流动横截面大致位于流动横截面的中心或抽出部分中的抽吸管流动， 通过在径向方向上延伸的中空支柱从主流中排出冷却流，借助于抽出管将该冷却流从装置中转移出来，并将其提供给至少一个待冷却的附件 并且通过返回开口将引导通过附件的冷却流再循环以用于冷却目的到主流。

公开(公告)号：US20100011739A1

公开(公告)日：2010-01-21

申请号：US11719944

申请日：2005-11-12

Applicant: Werner Goetz ,  Oliver Schmidt

Inventor： Werner Goetz ,  Oliver Schmidt

IPC: F02C7/12 ,  F01N5/02

CPC classification number: F02C7/16 ,  F05D2260/205 ,  F05D2260/232 ,  F05D2260/60 ,  Y02T50/675

Abstract: A device and method for drawing off and recirculating cooling streams, specifically for drawing off and recirculating a cooling stream of fuel for cooling at least one aircraft engine accessory, is disclosed. The device having a tubular jacket part defining a flow cross-section through which a primary stream, specifically a fuel stream, flows by way of an extraction pipe which is positioned approximately in the center of the flow cross-section, or jacket part, in order to draw off a cooling stream from the primary stream, by way of a hollow strut extending in the radial direction to divert this cooling stream from the device with the aid of the extraction pipe and to supply it to at least one accessory to be cooled, and by way of a return opening to recirculate the cooling stream directed through the accessory for cooling purposes to the primary stream.

Abstract translation: 公开了一种用于抽出和循环冷却流的装置和方法，特别是用于抽出和再循环用于冷却至少一个飞机发动机附件的燃料的冷却流。 该装置具有限定流动截面的管状套管部分，主流体，特别是燃料流通过该流动横截面大致位于流动横截面的中心或抽出部分中的抽吸管流动， 通过在径向方向上延伸的中空支柱从主流中排出冷却流，借助于抽出管将该冷却流从装置中转移出来，并将其提供给至少一个待冷却的附件 并且通过返回开口将引导通过附件的冷却流再循环以用于冷却目的到主流。

公开(公告)号：US20100249985A1

公开(公告)日：2010-09-30

申请号：US12727214

申请日：2010-03-18

Applicant: BERND HAEHNEL ,  Werner Goetz ,  Roland Benz

Inventor： BERND HAEHNEL ,  Werner Goetz ,  Roland Benz

IPC: G06F7/00 ,  B65H23/038

CPC classification number: B65H23/038 ,  B65H2403/52

Abstract: A device for automatically controlling the edges of a web of sheeting has a first deflecting roller and a second deflecting roller, which are arranged parallel to each other, and also a drive for shifting the deflecting rollers in opposite axial directions. A sensor detects the position of the sheeting. The drive shifts the deflecting rollers in opposite axial directions and the ratio between the friction of the sheeting on the first deflecting roller and the friction of the sheeting on the second deflecting roller is changed on the basis of the position of the sheeting detected by the sensor.

Abstract translation: 用于自动控制片材幅材的边缘的装置具有彼此平行布置的第一偏转辊和第二偏转辊，以及用于使偏转辊沿相反的轴向移动的驱动器。 传感器检测片材的位置。 驱动器使偏转辊沿相反的轴向移动，并且基于由传感器检测到的片材的位置来改变第一偏转辊上的片材的摩擦和第二偏转辊上的片材的摩擦之间的比率 。

公开(公告)号：US20070262342A1

公开(公告)日：2007-11-15

申请号：US11383456

申请日：2006-05-15

Applicant: Junko Kobayashi ,  Werner Goetz ,  Anneli Munkholm

Inventor： Junko Kobayashi ,  Werner Goetz ,  Anneli Munkholm

IPC: H01L33/00

CPC classification number: H01L33/305 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/382

Abstract: A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. Some examples of such a semiconductor light emitting device may be formed by growing an n-type region, growing a p-type region, and growing a light emitting layer disposed between the n-type region and the p-type region. The difference in temperature between the growth temperature of a part of the n-type region and the growth temperature of a part of the p-type region is at least 140° C.

Abstract translation: 半导体结构包括发光区域，设置在发光区域的第一侧上的p型区域和设置在发光区域的第二侧上的n型区域。 发光区域的第一侧的半导体结构的厚度的至少10％包括铟。 可以通过生长n型区域，生长p型区域以及生长设置在n型区域和p型区域之间的发光层来形成这种半导体发光器件的一些示例。 n型区域的一部分的生长温度与p型区域的一部分的生长温度之间的温度差为至少140℃。

公开(公告)号：US09634181B2

公开(公告)日：2017-04-25

申请号：US13877549

申请日：2011-10-26

Applicant: Nathan Frederick Gardner ,  Melvin Barker McLaurin ,  Michael Jason Grundmann ,  Werner Goetz ,  John Edward Epler ,  Qi Ye

Inventor： Nathan Frederick Gardner ,  Melvin Barker McLaurin ,  Michael Jason Grundmann ,  Werner Goetz ,  John Edward Epler ,  Qi Ye

IPC: H01L21/00 ,  H01L33/00 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  C30B33/06

CPC classification number: H01L33/0075 ,  C30B23/025 ,  C30B25/183 ,  C30B29/403 ,  C30B33/06 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method according to embodiments of the invention, a III-nitride layer is grown on a growth substrate. The III-nitride layer is connected to a host substrate. The growth substrate is removed. The growth substrate is a non-III-nitride material. The growth substrate has an in-plane lattice constant a substrate. The III-nitride layer has a bulk lattice constant a layer. In some embodiments, [(|a substrate−a layer|)/asubstrate]*100% is no more than 1%.

公开(公告)号：US20130244364A1

公开(公告)日：2013-09-19

申请号：US13877549

申请日：2011-10-26

Applicant: Nathan Frederick Gardner ,  Melvin Barker McLaurin ,  Michael Jason Grundmann ,  Werner Goetz ,  John Edward Epler ,  Qi Ye

Inventor： Nathan Frederick Gardner ,  Melvin Barker McLaurin ,  Michael Jason Grundmann ,  Werner Goetz ,  John Edward Epler ,  Qi Ye

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  C30B23/025 ,  C30B25/183 ,  C30B29/403 ,  C30B33/06 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method according to embodiments of the invention, a III-nitride layer is grown on a growth substrate. The III-nitride layer is connected to a host substrate. The growth substrate is removed. The growth substrate is a non-III-nitride material. The growth substrate has an in-plane lattice constant a substrate. The III-nitride layer has a bulk lattice constant a layer. In some embodiments, [(|a substrate−a layer|)/asubstrate]*100% is no more than 1%.

Abstract translation: 在根据本发明的实施方案的方法中，在生长衬底上生长III族氮化物层。 III族氮化物层连接到主体衬底。 除去生长底物。 生长衬底是非III族氮化物材料。 生长衬底具有衬底的面内晶格常数。 III族氮化物层的层状晶格常数。 在一些实施方案中，[（| a底物 - 层|）/底物] * 100％不超过1％。

公开(公告)号：US20050236641A1

公开(公告)日：2005-10-27

申请号：US10830202

申请日：2004-04-21

Applicant: Werner Goetz ,  Michael Krames ,  Anneli Munkholm

Inventor： Werner Goetz ,  Michael Krames ,  Anneli Munkholm

IPC: H01L33/08 ,  H01L33/32 ,  H01L29/22

CPC classification number: H01L33/32 ,  H01L33/08 ,  H01L33/12

Abstract: In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.

Abstract translation: 在III族氮化物发光器件中，三元或四元发光层被配置为控制相分离程度。 在一些实施例中，发光层中的任何点处的InN组成与发光层中的平均InN组成之间的差小于20％。 在一些实施方案中，通过控制具有与发光层相同的组成的松弛的独立层中的晶格常数与基极区域中的晶格常数的比例来实现相分离的控制。 例如，该比率可以在约1至约1.01之间。

公开(公告)号：US20060011937A1

公开(公告)日：2006-01-19

申请号：US11227814

申请日：2005-09-14

Applicant: Werner Goetz ,  Michael Krames ,  Anneli Munkholm

Inventor： Werner Goetz ,  Michael Krames ,  Anneli Munkholm

IPC: H01L21/00 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/08 ,  H01L33/12 ,  H01L33/20

Abstract: In a III-nitride light emitting device, a ternary or quaternary light emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light emitting layer and the average InN composition in the light emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light emitting layer to the lattice constant in a base region. For example, the ratio may be between about 1 and about 1.01.

公开(公告)号：US20050263780A1

公开(公告)日：2005-12-01

申请号：US11177670

申请日：2005-07-07

Applicant: David Bour ,  Nathan Gardner ,  Werner Goetz ,  Stephen Stockman ,  Tetsuya Takeuchi ,  Ghulam Hasnain ,  Christopher Kocot ,  Mark Hueschen

Inventor： David Bour ,  Nathan Gardner ,  Werner Goetz ,  Stephen Stockman ,  Tetsuya Takeuchi ,  Ghulam Hasnain ,  Christopher Kocot ,  Mark Hueschen

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/06

Abstract: A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.

公开(公告)号：US3948008A

公开(公告)日：1976-04-06

申请号：US481385

申请日：1974-06-20

Applicant: Werner Goetz

Inventor： Werner Goetz

IPC: E04B1/00 ,  E04B5/02 ,  E04B1/34 ,  E04B1/04

CPC classification number: E04B1/003 ,  E04B5/04

Abstract: The present prefabricated structural element is especially adapted for the formation of balconies or other cantilevered structures. To this end a floor slab section or main section is joined to a balcony or cantilevered section by reinforcing steel elements which are connected to or in both sections and which bridge a gap between the sections. The gap width between the sections is preferably narrower than the top width of a supporting member, such as a wall or header, so that the gap may be filled with poured-in-place concrete once the element is properly placed in the desired position on top of the header or other supporting structure.

Abstract translation: 现有的预制结构元件特别适用于形成阳台或其他悬臂结构。 为此，通过加强连接到两个部分中或两个部分中的钢元件并且桥接两个部分之间的间隙，将楼板部分或主体部分连接到阳台或悬臂部分。 部分之间的间隙宽度优选地比支撑构件（例如壁或集管）的顶部宽度窄，使得当将元件适当地放置在期望位置上时，间隙可以填充浇注混凝土 头部或其他支撑结构的顶部。