公开(公告)号：US09650255B2

公开(公告)日：2017-05-16

申请号：US14031156

申请日：2013-09-19

Applicant: Wacker Chemie AG

Inventor： Andreas Hirschmann ,  Walter Haeckl ,  Uwe Paetzold

IPC: C01B33/107 ,  B01J4/00

CPC classification number: C01B33/1071 ,  B01J4/005 ,  B01J2219/00063 ,  B01J2219/00135 ,  B01J2219/00159 ,  B01J2219/002 ,  B01J2219/00238

Abstract: The invention provides a process for endothermic gas phase reaction in a reactor, in which reactant gases are introduced into the reactor via a gas inlet apparatus and distributed homogeneously into a heating zone by means of a gas distribution apparatus, wherein the reactant gases are heated in the heating zone to a mean temperature of 500-1500° C. by means of heating elements and then conducted into a reaction zone, the reactant gases reacting in the reaction zone to give a product gas which is conducted out of the reactor via a gas outlet apparatus. Further subject matter of the invention relates to a process for endothermic gas phase reaction in a reactor, wherein the heating of the heating elements is controlled by temperature measurements in the reaction zone, at least two temperature sensors being present in the reaction zone for this purpose, and reactor for performance of the process.

公开(公告)号：US11027979B2

公开(公告)日：2021-06-08

申请号：US16463242

申请日：2016-11-23

Applicant: WACKER CHEMIE AG

Inventor： Martin Zettl ,  Andreas Hirschmann ,  Uwe Pätzold ,  Robert Ring

IPC: C01B33/107

Abstract: The invention relates to a process for hydrogenating silicon tetrachloride in a reactor, wherein a reactant gas containing hydrogen and silicon tetrachloride is heated to a temperature between 850° C. and 1600° C. by means of at least one heating element, which comprises a graphite surface, wherein the temperature of the heating element is between 850° C. and 1600° C. The process is characterized in that a nitrogen compound is added to the reactant gas in a substance amount fraction of 0.1 to 10% based on hydrogen.

公开(公告)号：US20220089449A1

公开(公告)日：2022-03-24

申请号：US17309805

申请日：2018-12-19

Applicant: Wacker Chemie AG

Inventor： Karl-Heinz Rimböck ,  Andreas Hirschmann

IPC: C01B33/107

Abstract: The present disclosure relates to a process for producing chlorosilanes by reaction of a reaction gas containing hydrogen, tetrachlorosilane and optionally at least one further chlorosilane in a reactor and optionally in the presence of a catalyst. The chlorosilanes have the general formula HnSiCl4-n, and the reactor design is described by an index K1, the composition of the reaction gas before entry into the reactor is described by an index K2, and the reaction conditions are described by an index K3.

公开(公告)号：US20190322534A1

公开(公告)日：2019-10-24

申请号：US16463242

申请日：2016-11-23

Applicant: WACKER CHEMIE AG

Inventor： Martin Zettl ,  Andreas Hirschmann ,  Uwe Pätzoid ,  Robert Ring

IPC: C01B33/107

Abstract: The invention relates to a process bit hydrogenating silicon tetrachloride in a reactor, wherein a reactant gas containing hydrogen and silicon tetrachloride is heated to a temperature between 850° C. and 1600° C. by means of at least one heating element, which comprises a graphite surface, wherein the temperature of the heating element is between 850° C. and 1600° C. The process is characterized in that a nitrogen compound is added to the reactant gas in a substance amount fraction of 0.1 to 70% based on hydrogen.