公开(公告)号：US20190153595A1

公开(公告)日：2019-05-23

申请号：US15505107

申请日：2016-12-28

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Xuanyun Wang

IPC: C23C16/40 ,  C23C16/455 ,  H01L27/12 ,  H01L21/02

Abstract: The present invention provides a C-axis Aligned Crystalline IGZO thin film and a manufacture method thereof. In the manufacture method of the C-axis Aligned Crystalline IGZO thin film of the present invention, by utilizing the method of atomic layer deposition to manufacture the C-axis Aligned Crystalline IGZO thin film, the structure of the C-axis Aligned Crystalline IGZO can be accurately controlled in the atomic level, and the crystalline quality of the C-axis Aligned Crystalline IGZO is fine, and the oxygen defect is less, which can raise the stability of TFT; moreover, the area of the crystalline region in the C-axis Aligned Crystalline IGZO thin film is larger, which reaches up for micron level to millimeter level, and thus can promote the large scale application of the C-axis Aligned Crystalline IGZO; meanwhile, the present invention utilizes the optimized process condition to manufacture the C-axis Aligned Crystalline IGZO thin film.

公开(公告)号：US10128453B2

公开(公告)日：2018-11-13

申请号：US15126584

申请日：2016-04-01

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Xuanyun Wang

IPC: H01L29/16 ,  H01L51/05 ,  H01L29/786 ,  H01B1/24 ,  H01L21/205 ,  H01L21/3065 ,  H01L27/32 ,  H01L29/66

Abstract: The present invention provides a method for manufacturing a graphene thin-film transistor, which includes: depositing a graphene layer on a surface of a copper foil; depositing a metal layer on a surface of the graphene layer; attaching a support layer to a surface of the metal layer to form a graphene film; placing the graphene film in a copper etching solution until the copper foil is dissolved completely, then transferring the graphene film to a target substrate, and removing the support layer; defining patterns of a source and a drain on the surface of the metal layer, manufacturing a source electrode and a drain electrode, and manufacturing a gate electrode on a target substrate.

公开(公告)号：US10096656B1

公开(公告)日：2018-10-09

申请号：US15541471

申请日：2017-05-16

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Zhe Liu ,  Xuanyun Wang

IPC: H01L21/00 ,  H01L27/28 ,  H01L27/12 ,  H01L27/32 ,  H01L51/56

Abstract: The invention provides a manufacturing method for complementary TFT device. The manufacturing method for complementary TFT device uses a solution method to continuously form a metal oxide semiconductor TFT and an organic semiconductor TFT; the metal oxide semiconductor TFT and the organic semiconductor TFT are electrically connected, and one of the metal oxide semiconductor TFT and the organic semiconductor TFT is an N-type channel TFT, and the other is a P-type channel TFT. The method can reduce the use of vacuum apparatus and high temperature apparatus, and explore the advantages of the solution method to realize large area and low-cost to reduce production costs and increase product competitiveness. The invention also provides a manufacturing method for OLED display panel, able to reduce production cost and increase product competitiveness.

公开(公告)号：US20170253532A1

公开(公告)日：2017-09-07

申请号：US15085992

申请日：2016-03-30

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Xuanyun Wang

IPC: C04B35/622 ,  C09D5/24 ,  C01B31/04

CPC classification number: C04B35/62218 ,  C01B31/0438 ,  C04B35/522 ,  C09D5/24

Abstract: A method for manufacturing a flexible graphene electrically conductive film includes (1) providing a base and forming a graphene layer on a surface of the base; (2) providing polyvinyl alcohol, dissolving polyvinyl alcohol in water and heating to form a colloidal solution, which after cooling, forms a polyvinyl alcohol colloidal solution; and coating the polyvinyl alcohol colloidal solution on a surface of the graphene layer and drying so as to form a supporting layer on the surface of the graphene layer; (3) removing the base from the graphene layer; and (4) dissolving the supporting layer on the graphene layer in water so as to obtain a flexible graphene electrically conductive film that is free of surface residue.

公开(公告)号：US10071935B2

公开(公告)日：2018-09-11

申请号：US15085992

申请日：2016-03-30

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Xuanyun Wang

IPC: H05B6/00 ,  C04B35/622 ,  C01B31/04 ,  C09D5/24

CPC classification number: C04B35/62218 ,  C01B32/182 ,  C04B35/522 ,  C09D5/24

Abstract: A photoelectric converter includes a photoelectric conversion element, which includes a first electrode and a second electrode disposed discretely and a photoelectric conversion material layer disposed between the first electrode and the second electrode and in which a current generated in the photoelectric conversion material layer changes with the lapse of an application time, where a constant amount of light is applied to the photoelectric conversion material layer while a voltage is applied between the first electrode and the second electrode, and a current detection circuit to detect the change in the current.