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公开(公告)号：US10804343B2
公开(公告)日：2020-10-13
申请号：US15541785
申请日：2017-05-31
Inventor： Songshan Li
Abstract: An AMOLED panel is disclosed. The panel includes, from bottom up in sequence, a substrate, a first electrode layer, an opaque insulation layer, and pixel defined layers among which pixel regions are arranged. The opaque insulation layer extends to the pixel region in which an organic light emitting layer is arranged. The organic light emitting layer has a film thickness non-uniform region at a position near to an inclined surface of a pixel defined layer facing the pixel region. When observed along a normal line direction of the substrate, a projection of the film thickness non-uniform region on the opaque insulation layer is inside the opaque insulation layer. In the panel, the non-uniform light resulted by the film thickness non-uniform region can be completely shaded by the opaque insulation layer. In this manner, only light with a uniform brightness that is emitted by a film thickness uniform region can transmit through the substrate, and thus the pixel region can have a uniform brightness. Therefore, brightness uniformity of the panel can be improved. A method for manufacturing the panel is further disclosed. A performance of the panel can be ensured, and a product quality can be improved.
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公开(公告)号：US10777581B2
公开(公告)日：2020-09-15
申请号：US15550142
申请日：2017-07-06
Inventor： Songshan Li
IPC: H01L27/12 , H01L27/32 , H01L29/08 , H01L29/417 , H01L31/0224
Abstract: A method for manufacturing an IGZO thin-film transistor includes: manufacturing a buffer layer, an active layer, a gate electrode layer, and a gate insulator layer in sequence on a substrate, and performing a patterning process; depositing a transparent insulating metal oxide layer on the patterned buffer layer, the active layer, the gate electrode layer, and the gate insulator layer by sputtering, and annealing the transparent insulating metal oxide layer so as to improve electric properties of a thin-film transistor; depositing a dielectric layer on the transparent insulating metal oxide layer, and patterning the dielectric layer and the transparent insulating metal oxide layer by means of a photolithography process and a dry etch process; depositing S/D (source/drain) contact regions on the dielectric layer; and performing a patterning process.
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公开(公告)号：US10818704B2
公开(公告)日：2020-10-27
申请号：US15565498
申请日：2017-08-03
Inventor： Songshan Li
IPC: H01L27/12 , H01L29/786 , H01L51/52 , H01L51/56 , G02F1/13357
Abstract: Disclosed is a method for manufacturing a thin film transistor, and a thin film transistor, relating to the technical field of liquid crystal display. The method comprises steps of: forming a buffer layer, an active layer, a gate insulator layer, and a gate electrode layer successively on a glass substrate and patterning these layers; forming an inter-layer dielectric layer on the buffer layer, the active layer, and the gate electrode layer and patterning the inter-layer dielectric layer; forming a source and a drain on the inter-layer dielectric layer, enabling the source and the drain to come into contact with the active layer, and patterning the source and the drain; forming a passivation layer and an organic photoresist layer successively on the inter-layer dielectric layer, the source, and the drain, and patterning the organic photoresist layer; dry-etching the passivation layer by using the organic photoresist layer as a mask, so as to form a hole on the passivation layer; and forming an organic light-emitting device by means of the hole on the passivation layer. The method saves a mask, requires simple techniques, and saves manufacturing costs. Besides, the developer is not able to come into direct contact with exposed aluminum of the source and the drain resulted from etching of the passivation layer. The method thus achieves the aim of improving product characteristics.
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