公开(公告)号：US12132120B2

公开(公告)日：2024-10-29

申请号：US17598275

申请日：2021-08-06

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Hong Cheng ,  Chao Tian ,  Yanqing Guan ,  Guanghui Liu

IPC: H01L29/786 ,  H01L29/423 ,  G02F1/1368 ,  H10K59/121

CPC classification number: H01L29/78696 ,  H01L29/42384 ,  G02F1/1368 ,  H10K59/1213

Abstract: A thin film transistor and a display panel are provided. A first dimension of a first transmission portion electrically connected to a source heavily-doped portion is different from a second dimension of a second transmission portion electrically connected to a drain heavily-doped portion, so that an intensity of an electric field of carriers transmitted by the transmission portion corresponding to the larger one of the first dimension or the second dimension is smaller when the thin film transistor is turned on, thereby reducing the bombardment effect of the carriers on a source or a drain and improving the stability of thin film transistor.