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公开(公告)号:US09437786B2
公开(公告)日:2016-09-06
申请号:US14936025
申请日:2015-11-09
Applicant: VENNTIS TECHNOLOGIES LLC
Inventor: Jeffrey L. Mastin , Daniel J. Fisher , Jamie C. Caldwell , David W. Caldwell , William D. Schaefer , Justin T. Teitt
CPC classification number: H01L33/50 , A01G7/045 , H01L27/15 , H01L33/08 , H01L33/507 , H01L33/54 , H01L33/58 , H01L33/60 , H01L33/642 , H01L2933/0091 , Y02P60/149
Abstract: A spectrally adapted light emitting device for illuminating plants includes at least one semiconductor light-emitting diode (LED), at least one light conversion element for down-converting a portion of light emitted at the first wavelength to at least a second wavelength between 600 nm-680 nm, and at least one scattering device to diffuse light within the light emitting device. The at least one LED is configured to emit at least a first wavelength between 400 nm and 480 nm. The spectral light output from the spectrally adapted light emitting device is bi-modal with wavelengths in a range of 400 nm and 800 nm including a first local maximum between 400 nm and 480 nm and a second local maximum between 600 nm-680 nm with a local minimum between the first local maximum and the second local maximum.
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公开(公告)号:US09041286B2
公开(公告)日:2015-05-26
申请号:US14290043
申请日:2014-05-29
Applicant: Venntis Technologies LLC
Inventor: Daniel J. Fisher , David W. Caldwell , Justin T. Teitt , Jamie C. Caldwell , William D. Schaefer
IPC: F21K99/00
CPC classification number: F21K9/54 , F21K9/60 , F21K9/64 , F21Y2115/10 , H01L33/507 , H01L33/54 , H01L33/56 , H01L33/60
Abstract: A volumetric light emitting device includes a substrate, a semiconductor light emitting diode disposed on the substrate and a reflector ring extending axially from the substrate. The reflector ring defines a first volume bounded by the substrate, an inner wall of the reflector ring, and a terminal plane at a distal end of the reflector ring. An encapsulant fills the first volume and encapsulates the semiconductor light emitting diode. A volumetric light conversion element surrounds the reflector ring and the first volume wherein the volumetric light conversion element is adapted to down-convert light emitted from the semiconductor light emitting diode at a first wavelength and emit the down-converted light at a second wavelength. A second volume of encapsulant or scattering material extends axially between the terminal plane and the volumetric light conversion element.
Abstract translation: 体积发光器件包括衬底,设置在衬底上的半导体发光二极管和从衬底轴向延伸的反射器环。 反射器环限定由衬底限定的第一体积,反射器环的内壁和在反射器环的远端处的端子平面。 密封剂填充第一体积并封装半导体发光二极管。 体积光转换元件围绕反射器环和第一体积,其中体积光转换元件适于将半导体发光二极管发射的光以第一波长下变频,并以第二波长发射经下变频的光。 第二体积的密封剂或散射材料在终端平面和体积光转换元件之间轴向延伸。
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公开(公告)号:US20140374780A1
公开(公告)日:2014-12-25
申请号:US14311722
申请日:2014-06-23
Applicant: VENNTIS TECHNOLOGIES LLC
Inventor: William D. Schaefer , Daniel J. Fisher , Jamie C. Caldwell , David W. Caldwell , Jeffrey L. Mastin , Justin T. Teitt
CPC classification number: H01L33/50 , A01G7/045 , H01L27/15 , H01L33/08 , H01L33/507 , H01L33/54 , H01L33/58 , H01L33/60 , H01L33/642 , H01L2933/0091 , Y02P60/149
Abstract: A spectrally adapted light emitting device for illuminating plants includes at least one semiconductor light-emitting diode (LED), at least one light conversion element for down-converting a portion of light emitted at the first wavelength to at least a second wavelength between 600 nm-680 nm, and at least one scattering device to diffuse light within the light emitting device. The at least one LED is configured to emit at least a first wavelength between 400 nm and 480 nm. The spectral light output from the spectrally adapted light emitting device is bi-modal with wavelengths in a range of 400 nm and 800 nm including a first local maximum between 400 nm and 480 nm and a second local maximum between 600 nm-680 nm with a local minimum between the first local maximum and the second local maximum.
Abstract translation: 用于照明设备的光谱适应的发光装置包括至少一个半导体发光二极管(LED),至少一个光转换元件,用于将在第一波长发射的光的一部分下变频至600nm之间的至少第二波长 -680nm,以及至少一个散射装置,用于在发光器件内漫射光。 至少一个LED被配置为发射至少第一波长在400nm和480nm之间。 从光谱适应的发光器件输出的光谱光是双模态的,其波长在400nm和800nm的范围内,包括400nm至480nm之间的第一局部最大值和600nm-680nm之间的第二局部最大值, 第一局部最大值与第二局部最大值之间的局部最小值。
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公开(公告)号:US20160064620A1
公开(公告)日:2016-03-03
申请号:US14936025
申请日:2015-11-09
Applicant: VENNTIS TECHNOLOGIES LLC
Inventor: Jeffrey L. Mastin , Daniel J. Fisher , Jamie C. Caldwell , David W. Caldwell , William D. Schaefer , Justin T. Teitt
CPC classification number: H01L33/50 , A01G7/045 , H01L27/15 , H01L33/08 , H01L33/507 , H01L33/54 , H01L33/58 , H01L33/60 , H01L33/642 , H01L2933/0091 , Y02P60/149
Abstract: A spectrally adapted light emitting device for illuminating plants includes at least one semiconductor light-emitting diode (LED), at least one light conversion element for down-converting a portion of light emitted at the first wavelength to at least a second wavelength between 600 nm-680 nm, and at least one scattering device to diffuse light within the light emitting device. The at least one LED is configured to emit at least a first wavelength between 400 nm and 480 nm. The spectral light output from the spectrally adapted light emitting device is bi-modal with wavelengths in a range of 400 nm and 800 nm including a first local maximum between 400 nm and 480 nm and a second local maximum between 600 nm-680 nm with a local minimum between the first local maximum and the second local maximum.
Abstract translation: 用于照明设备的光谱适应的发光装置包括至少一个半导体发光二极管(LED),至少一个光转换元件,用于将在第一波长发射的光的一部分下变频至600nm之间的至少第二波长 -680nm,以及至少一个散射装置,用于在发光器件内漫射光。 至少一个LED被配置为发射至少第一波长在400nm和480nm之间。 从光谱适应的发光器件输出的光谱光是双模态的,其波长在400nm和800nm的范围内,包括400nm至480nm之间的第一局部最大值和600nm-680nm之间的第二局部最大值, 第一局部最大值与第二局部最大值之间的局部最小值。
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公开(公告)号:US09184350B2
公开(公告)日:2015-11-10
申请号:US14311722
申请日:2014-06-23
Applicant: VENNTIS TECHNOLOGIES LLC
Inventor: Jeffrey L. Mastin , William D. Schaefer , Daniel J. Fisher , Jamie C. Caldwell , David W. Caldwell , Justin T. Teitt
CPC classification number: H01L33/50 , A01G7/045 , H01L27/15 , H01L33/08 , H01L33/507 , H01L33/54 , H01L33/58 , H01L33/60 , H01L33/642 , H01L2933/0091 , Y02P60/149
Abstract: A spectrally adapted light emitting device for illuminating plants includes at least one semiconductor light-emitting diode (LED), at least one light conversion element for down-converting a portion of light emitted at the first wavelength to at least a second wavelength between 600 nm-680 nm, and at least one scattering device to diffuse light within the light emitting device. The at least one LED is configured to emit at least a first wavelength between 400 nm and 480 nm. The spectral light output from the spectrally adapted light emitting device is bi-modal with wavelengths in a range of 400 nm and 800 nm including a first local maximum between 400 nm and 480 nm and a second local maximum between 600 nm-680 nm with a local minimum between the first local maximum and the second local maximum.
Abstract translation: 用于照明设备的光谱适应的发光装置包括至少一个半导体发光二极管(LED),至少一个光转换元件,用于将在第一波长发射的光的一部分下变频至600nm之间的至少第二波长 -680nm,以及至少一个散射装置,用于在发光器件内漫射光。 至少一个LED被配置为发射至少第一波长在400nm和480nm之间。 从光谱适应的发光器件输出的光谱光是双模态的,其波长在400nm和800nm的范围内,包括400nm至480nm之间的第一局部最大值和600nm-680nm之间的第二局部最大值, 第一局部最大值与第二局部最大值之间的局部最小值。
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公开(公告)号:US20140354145A1
公开(公告)日:2014-12-04
申请号:US14290043
申请日:2014-05-29
Applicant: VENNTIS TECHNOLOGIES LLC
Inventor: Daniel J. Fisher , David W. Caldwell , Justin T. Teitt , Jamie C. Caldwell , William D. Schaefer
IPC: F21K99/00
CPC classification number: F21K9/54 , F21K9/60 , F21K9/64 , F21Y2115/10 , H01L33/507 , H01L33/54 , H01L33/56 , H01L33/60
Abstract: A volumetric light emitting device includes a substrate, a semiconductor light emitting diode disposed on the substrate and a reflector ring extending axially from the substrate. The reflector ring defines a first volume bounded by the substrate, an inner wall of the reflector ring, and a terminal plane at a distal end of the reflector ring. An encapsulant fills the first volume and encapsulates the semiconductor light emitting diode. A volumetric light conversion element surrounds the reflector ring and the first volume wherein the volumetric light conversion element is adapted to down-convert light emitted from the semiconductor light emitting diode at a first wavelength and emit the down-converted light at a second wavelength. A second volume of encapsulant or scattering material extends axially between the terminal plane and the volumetric light conversion element.
Abstract translation: 体积发光器件包括衬底,设置在衬底上的半导体发光二极管和从衬底轴向延伸的反射器环。 反射器环限定由衬底限定的第一体积,反射器环的内壁和在反射器环的远端处的端子平面。 密封剂填充第一体积并封装半导体发光二极管。 体积光转换元件围绕反射器环和第一体积,其中体积光转换元件适于将半导体发光二极管发射的光以第一波长下变频,并以第二波长发射经下变频的光。 第二体积的密封剂或散射材料在终端平面和体积光转换元件之间轴向延伸。
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