公开(公告)号：US20050005846A1

公开(公告)日：2005-01-13

申请号：US10602294

申请日：2003-06-23

申请人： Venkat Selvamanickam ,  Yijie Li ,  Chan Park

发明人： Venkat Selvamanickam ,  Yijie Li ,  Chan Park

IPC分类号： C23C14/08 ,  C23C14/28 ,  C23C14/56 ,  H01L39/24 ,  C23C16/00

CPC分类号： C23C14/087 ,  C23C14/28 ,  C23C14/562 ,  H01L39/2448

摘要： The present invention relates to an apparatus and method for forming a high-temperature superconducting film on a long tape substrate at speeds suitable for large-scale production. The method includes a spooling system for use in a high-throughput, continuous pulsed laser deposition (PLD) process in which a superconducting layer, such as yttrium-barium-copper-oxide (YBCO), is deposited atop a buffered metal substrate tape that is translated through one or more deposition chambers via the action of a reel-to-reel spooling system and a conductive-radiant multi-zone substrate heater. It also optionally includes a multi-target manipulator apparatus and multiple laser beams in which multiple targets are impinged upon simultaneously.

摘要翻译： 本发明涉及一种适用于大规模生产的速度在长带基板上形成高温超导膜的装置和方法。 该方法包括在高通量连续脉冲激光沉积（PLD）工艺中使用的绕线系统，其中诸如钇 - 氧化钡 - 氧化铜（YBCO）的超导层沉积在缓冲的金属基底带上， 通过卷轴到卷轴绕线系统和导电辐射多区域基板加热器的作用，通过一个或多个沉积室翻转。 它还可选地包括多目标操纵器装置和多个激光束，其中多个目标同时撞击。

公开(公告)号：US20070116860A1

公开(公告)日：2007-05-24

申请号：US11554428

申请日：2006-10-30

申请人： Venkat Selvamanickam ,  Yijie Li ,  Chan Park

发明人： Venkat Selvamanickam ,  Yijie Li ,  Chan Park

IPC分类号： B05D5/12

CPC分类号： C23C14/087 ,  C23C14/28 ,  C23C14/562 ,  H01L39/2448

摘要： The present invention relates to an apparatus and method for forming a high-temperature superconducting film on a long tape substrate at speeds suitable for large-scale production. The method includes a spooling system for use in a high-throughput, continuous pulsed laser deposition (PLD) process in which a superconducting layer, such as yttrium-barium-copper-oxide (YBCO), is deposited atop a buffered metal substrate tape that is translated through one or more deposition chambers via the action of a reel-to-reel spooling system and a conductive-radiant multi-zone substrate heater. It also optionally includes a multi-target manipulator apparatus and multiple laser beams in which multiple targets are impinged upon simultaneously.

摘要翻译： 本发明涉及一种适用于大规模生产的速度在长带基板上形成高温超导膜的装置和方法。 该方法包括在高通量连续脉冲激光沉积（PLD）工艺中使用的绕线系统，其中诸如钇 - 氧化钡 - 氧化铜（YBCO）的超导层沉积在缓冲的金属基底带上， 通过卷轴到卷轴绕线系统和导电辐射多区域基板加热器的作用，通过一个或多个沉积室翻转。 它还可选地包括多目标操纵器装置和多个激光束，其中多个目标同时撞击。

公开(公告)号：US07501145B2

公开(公告)日：2009-03-10

申请号：US11554428

申请日：2006-10-30

申请人： Venkat Selvamanickam ,  Yijie Li ,  Chan Park

发明人： Venkat Selvamanickam ,  Yijie Li ,  Chan Park

IPC分类号： B05D5/12

CPC分类号： C23C14/087 ,  C23C14/28 ,  C23C14/562 ,  H01L39/2448

摘要： A method includes feeding an uncoated substrate from a payout spool into a multi-chambered vacuum apparatus. The vacuum apparatus includes a plurality of deposition chambers defining an extended deposition zone, a multi-zone substrate heater located within the extended deposition zone, and multiple high-temperature superconductor (HTS) targets located within and being arranged linearly along the extended deposition zone. The multiple HTS targets include a first and second HTS target. The first and second HTS targets include a HTS material. The method farther includes translating the uncoated substrate along a translation path through the plurality of deposition chambers, impinging multiple laser beams simultaneously upon the multiple HTS targets and forming multiple overlapping plumes of HTS material within the extended deposition zone, depositing HTS material on a first major surface of the uncoated substrate to provide a coated substrate, and winding the coated substrate onto a take-up spool.

摘要翻译： 一种方法包括将未涂覆的基材从支付卷轴进料到多室真空装置中。 真空装置包括限定扩展沉积区的多个沉积室，位于扩展沉积区内的多区衬底加热器，以及位于延伸沉积区内并且沿延伸沉积区线性布置的多个高温超导体（HTS）靶。 多个HTS目标包括第一个和第二个HTS目标。 第一个和第二个HTS目标包括HTS材料。 所述方法还包括沿着平移路径平移未涂覆的基底通过多个沉积室，同时在多个HTS靶上冲击多个激光束并在扩展沉积区内形成多个重叠的HTS材料的羽流，将HTS材料沉积在第一主体上 未涂覆的基底的表面以提供涂覆的基底，并将涂覆的基底卷绕到卷取卷轴上。

公开(公告)号：US07286032B2

公开(公告)日：2007-10-23

申请号：US10616719

申请日：2003-07-10

申请人： Hee-Gyoun Lee ,  Yijie Li ,  Venkat Selvamanickam

发明人： Hee-Gyoun Lee ,  Yijie Li ,  Venkat Selvamanickam

IPC分类号： H01F6/00

CPC分类号： H01L39/143 ,  H01L39/2461

摘要： Rare-earth-Ba-Cu-O superconductors having improved critical current density are described, as are methods of making same. These superconductors comprise a drop in Jc of less than a factor of about 7 at a temperature of between about 30K to about 77K, and at a magnetic field of about 1 Tesla, when the magnetic field is applied normal to the surface of the superconductor, as compared to a Jc in the presence of no magnetic field. These superconductors, when a magnetic field is applied perpendicular to the HTS surface have a peak Jc that is about 50-90%, and when a magnetic field is applied in any orientation with respect to the HTS surface have a Jc value that is at least about 50%, of the peak Jc that exists when the magnetic field is applied parallel to the surface of the superconductor.

摘要翻译： 描述了具有改善的临界电流密度的稀土-BA-Cu-O超导体，以及制备它们的方法。 当施加磁场时，这些超导体在约30K至约77K之间的温度和约1特斯拉的磁场下包含小于约7的系数的小于等于7的下降 与没有磁场的场合相比，与超导体的表面垂直。 当垂直于HTS表面施加磁场时，这些超导体具有大约50-90％的峰值J，并且当相对于HTS表面以任何取向施加磁场时 具有与平行于超导体的表面施加磁场时存在的峰值Jc的至少约50％的J C值。

公开(公告)号：US20050007227A1

公开(公告)日：2005-01-13

申请号：US10616719

申请日：2003-07-10

申请人： Hee-Gyoun Lee ,  Yijie Li ,  Venkat Selvamanickam

发明人： Hee-Gyoun Lee ,  Yijie Li ,  Venkat Selvamanickam

IPC分类号： H01F1/00 ,  H01L39/14 ,  H01L39/24

CPC分类号： H01L39/143 ,  H01L39/2461

摘要： Rare-earth-Ba—Cu—O superconductors having improved critical current density are described, as are methods of making same. These superconductors comprise a drop in Jc of less than a factor of about 7 at a temperature of between about 30K to about 77K, and at a magnetic field of about 1 Tesla, when the magnetic field is applied normal to the surface of the superconductor, as compared to a Jc in the presence of no magnetic field. These superconductors, when a magnetic field is applied perpendicular to the HTS surface have a peak Jc that is about 50-90%, and when a magnetic field is applied in any orientation with respect to the HTS surface have a Jc value that is at least about 50%, of the peak Jc that exists when the magnetic field is applied parallel to the surface of the superconductor.

摘要翻译： 描述了具有改善的临界电流密度的稀土-BA-Cu-O超导体，以及制备它们的方法。 当磁场垂直于超导体的表面施加时，这些超导体在约30K至约77K之间的温度和约1特斯拉的磁场下包含小于7的小于约7的Jc， 与没有磁场的Jc相比。 当垂直于HTS表面施加磁场时，这些超导体具有约50-90％的峰值Jc，并且当相对于HTS表面以任何取向施加磁场时，Jc值至少为 当平行于超导体的表面施加磁场时存在的峰值Jc的约50％。