Measurement of Parameters Within an Integrated Circuit Chip Using a Nano-Probe
    2.
    发明申请
    Measurement of Parameters Within an Integrated Circuit Chip Using a Nano-Probe 审中-公开
    使用纳米探针的集成电路芯片内的参数测量

    公开(公告)号:US20120197570A1

    公开(公告)日:2012-08-02

    申请号:US13015464

    申请日:2011-01-27

    CPC classification number: G01R1/06766 G01R31/31709 G01R35/005

    Abstract: At least a method and a system are described for monitoring and measuring one or more parameters in an integrated circuit chip by way of receiving a first voltage, a second voltage, and a control signal. In a representative embodiment, the first voltage is used for powering a probe and the second voltage is used as a voltage reference for voltage measurement within the integrated circuit chip. In one or more representative embodiments, the one or more parameters measured comprise minimum and maximum voltage levels of a signal, sampled voltage levels of a signal, a period of a signal, a duty cycle of a clock signal, a jitter of a clock signal, and/or a temperature at a location within the integrated circuit chip.

    Abstract translation: 描述了至少一种方法和系统,用于通过接收第一电压,第二电压和控制信号来监视和测量集成电路芯片中的一个或多个参数。 在代表性的实施例中,第一电压用于为探针供电,并且第二电压用作集成电路芯片内的电压测量的电压基准。 在一个或多个代表性实施例中,测量的一个或多个参数包括信号的最小和最大电压电平,信号的采样电压电平,信号的周期,时钟信号的占空比,时钟信号的抖动 ,和/或集成电路芯片内的位置处的温度。

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