专利检索 ap:("University of Houston System") AND inv:"Weishu Liu" 第 1 页

1.

发明申请
Synthesis of N-Type Thermoelectric Materials, Including Mg-Sn-Ge Materials, and Methods for Fabrication Thereof 审中-公开

公开(公告)号：US20180047886A1

公开(公告)日：2018-02-15

申请号：US15547374

申请日：2015-12-10

申请人： University of Houston System

发明人： Zhifeng Ren , Weishu Liu

IPC分类号： H01L35/26 , C22C13/00 , B22F3/24 , B22F9/04 , B22F3/14 , H01L35/34 , C22C1/04

CPC分类号： H01L35/26 , B22F3/14 , B22F3/24 , B22F9/04 , B22F2003/248 , B22F2009/043 , B22F2301/30 , B22F2998/10 , C22C1/04 , C22C1/0408 , C22C1/0483 , C22C13/00 , C22C23/00 , H01L35/16 , H01L35/22 , H01L35/34

摘要： Discussed herein are systems and methods for fabrication of MgSnGe-based thermoelectric materials for applications from room temperature and near room temperature to high temperature applications. The TE materials may be fabricated by hand or ball milling a powder to a predetermined particle size and hot-pressing the milled powder to form a thermoelectric component with desired properties including a figure of merit (ZT) over a temperature range. The TE materials fabricated may be disposed in thermoelectric devices for varying applications.

2.

发明授权
Synthesis of N-type thermoelectric materials, including Mg—Sn—Ge materials, and methods for fabrication thereof 有权

公开(公告)号：US10930834B2

公开(公告)日：2021-02-23

申请号：US15547374

申请日：2015-12-10

申请人： University of Houston System

发明人： Zhifeng Ren , Weishu Liu

IPC分类号： H01L35/26 , H01L35/34 , C22C1/04 , H01L35/22 , H01L35/16 , C22C23/00 , B22F3/14 , B22F3/24 , B22F9/04 , C22C13/00

摘要： Discussed herein are systems and methods for fabrication of MgSnGe-based thermoelectric materials for applications from room temperature and near room temperature to high temperature applications. The TE materials may be fabricated by hand or ball milling a powder to a predetermined particle size and hot-pressing the milled powder to form a thermoelectric component with desired properties including a figure of merit (ZT) over a temperature range. The TE materials fabricated may be disposed in thermoelectric devices for varying applications.

3.

发明申请
Contacts for Bi-Te-Based Materials and Methods of Manufacture 审中-公开

公开(公告)号：US20180076372A1

公开(公告)日：2018-03-15

申请号：US15565700

申请日：2015-12-10

申请人： University of Houston System

发明人： Zhifeng Ren , Weishu Liu

IPC分类号： H01L35/20 , H01L35/22 , H01L35/16 , H01L35/18 , H01L35/34 , C01B19/00

CPC分类号： H01L35/20 , C01B19/002 , H01L35/08 , H01L35/16 , H01L35/18 , H01L35/22 , H01L35/34

摘要： Systems and methods of manufacturing thermoelectric devices comprising at least one electrical contact fabricated using hot-pressing to increase the bonding strength at the contact interface(s) and reducing the contact resistance. The hot pressed component may include a first and a second metallic layer each in contact with a thermoelectric layer, and where a contact resistance between the first metallic layer and the thermoelectric layer or between the second metallic layer and the thermoelectric layer is less than about 10 μΩ cm2. When interlayers are employed in a thermoelectric device, first hot pressed contact interface is formed between the thermoelectric layer and the first interlayer and a second hot pressed contact interface is formed between the thermoelectric layer and the second interlayer, and at least one of the first and the second hot pressed contact interfaces comprises a bonding strength of at least 16 MPa.