公开(公告)号：US11723295B2

公开(公告)日：2023-08-08

申请号：US17551214

申请日：2021-12-15

Applicant: United Microelectronics Corp.

Inventor： Hai Tao Liu ,  Li Li Ding ,  Yao-Hung Liu ,  Guoan Du ,  Qi Lu Li ,  Chunlei Wan ,  Yi Yu Lin ,  Yuchao Chen ,  Huakai Li ,  Hung-Yueh Chen

IPC: H01L45/00 ,  H01L27/24 ,  H10N70/00 ,  H10B63/00 ,  H10N70/20

CPC classification number: H10N70/8833 ,  H10B63/80 ,  H10N70/028 ,  H10N70/24 ,  H10N70/826 ,  H10N70/8265 ,  H10N70/841

Abstract: A method for fabricating memory device includes: providing a substrate having a bottom electrode layer therein, forming a buffer layer and a mask layer on the buffer layer over the substrate, in contact with the bottom electrode layer, performing an advanced oxidation process on a sidewall of the buffer layer to form a resistive layer, which surrounds the whole sidewall of the buffer layer and extends upward vertically from the substrate, and forming, over the substrate, a noble metal layer and a top electrode layer on the noble metal layer, fully covering the resistive layer and the mask layer.

公开(公告)号：US20220109104A1

公开(公告)日：2022-04-07

申请号：US17551214

申请日：2021-12-15

Applicant: United Microelectronics Corp.

Inventor： Hai Tao Liu ,  Li Li Ding ,  Yao-Hung Liu ,  Guoan Du ,  Qi Lu Li ,  Chunlei Wan ,  Yi Yu Lin ,  Yuchao Chen ,  Huakai Li ,  Hung-Yueh Chen

IPC: H01L45/00 ,  H01L27/24

Abstract: A method for fabricating memory device includes: providing a substrate having a bottom electrode layer therein, forming a buffer layer and a mask layer on the buffer layer over the substrate, in contact with the bottom electrode layer, performing an advanced oxidation process on a sidewall of the buffer layer to form a resistive layer, which surrounds the whole sidewall of the buffer layer and extends upward vertically from the substrate, and forming, over the substrate, a noble metal layer and a top electrode layer on the noble metal layer, fully covering the resistive layer and the mask layer.

公开(公告)号：US11239419B2

公开(公告)日：2022-02-01

申请号：US16505190

申请日：2019-07-08

Applicant: United Microelectronics Corp.

Inventor： Hai Tao Liu ,  Li Li Ding ,  Yao-Hung Liu ,  Guoan Du ,  Qi Lu Li ,  Chunlei Wan ,  Yi Yu Lin ,  Yuchao Chen ,  Huakai Li ,  Hung-Yueh Chen

IPC: H01L45/00 ,  H01L27/24

Abstract: The present invention relates to a structure of a memory device. The structure of a memory device includes a substrate, including a bottom electrode layer formed therein. A buffer layer is disposed on the substrate, in contact with the bottom electrode layer. A resistive layer surrounds a whole sidewall of the buffer layer, and extends upward vertically from the substrate. A mask layer is disposed on the buffer layer and the resistive layer. A noble metal layer is over the substrate, and fully covers the resistive layer and the mask layer. A top electrode layer is disposed on the noble metal layer.