公开(公告)号：US20240347108A1

公开(公告)日：2024-10-17

申请号：US18201213

申请日：2023-05-24

申请人： UNITED MICROELECTRONICS CORP.

发明人： Chi-Hsiu HSU ,  Yu-Huan YEH ,  Cheng-Hsiao LAI ,  Guan-Lin CHEN ,  Chuan-Fu WANG ,  Hung-Yu FAN CHIANG

IPC分类号： G11C13/00

CPC分类号： G11C13/0064

摘要： A forming method of a ReRAM array includes steps as follows: Firstly, a first pulse is applied to a first ReRAM unit in the ReRAM array. Afterwards, a second pulse is applied to the first ReRAM unit, wherein the electrical property of the first pulse is opposite to that of the second pulse. Then, a verification pulse is applied to the first ReRAM unit to verify whether the first resistance value of the first ReRAM unit passes a preset threshold. When the first resistance value passes the preset threshold value, a third pulse is applied to the first ReRAM unit, wherein the first pulse and the third pulse have the same electrical property, and the first pulse has a voltage value substantially the same to that of the third pulse.