公开(公告)号：US09385001B1

公开(公告)日：2016-07-05

申请号：US14660281

申请日：2015-03-17

申请人： Toshiba Corporation

发明人： Yongxiang He ,  Xinyu Zhang

IPC分类号： H01L21/3213 ,  H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/47 ,  H01L29/423 ,  H01L29/66 ,  H01L21/285 ,  H01L21/02

CPC分类号： H01L21/32133 ,  H01L21/28264 ,  H01L21/32134 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787

摘要： A P-N junction gate high electron mobility transistor (HEMT) device with a self-aligned gate structure and a method for making the HEMT device is disclosed. In one embodiment, the HEMT device includes a heterojunction comprising a barrier layer formed on a channel layer. A gate layer is formed on the barrier layer, the gate layer comprising a P-type group III-V semiconductor material suitable for depleting the carriers of a current conducting channel at the heterojunction when the HEMT device is off. A gate electrode comprising indium tin oxide (ITO) is formed on the gate layer, the gate electrode and the gate layer having substantially the same length.

摘要翻译： 公开了具有自对准栅极结构的P-N结栅极高电子迁移率晶体管（HEMT）器件和制造HEMT器件的方法。 在一个实施例中，HEMT装置包括异质结，其包括形成在通道层上的阻挡层。 栅极层形成在阻挡层上，栅极层包括适于在HEMT器件断开时在异质结上消耗导电沟道的载流子的P型III-V族半导体材料。 在栅极层上形成包括氧化铟锡（ITO）的栅电极，栅极电极和栅极层具有基本相同的长度。