PLASMA PROCESSING APPARATUS
    1.
    发明申请

    公开(公告)号:US20210020416A1

    公开(公告)日:2021-01-21

    申请号:US17037406

    申请日:2020-09-29

    Abstract: There is provided a method for driving a member provided in a processing chamber. The method includes irradiating to the member measurement light having a wavelength that penetrates the member, detecting intensity distribution of reflected light based on reflected light from an upper surface of the member and reflected light from a bottom surface of the member, calculating an optical path difference by applying Fourier transform to a spectrum indicating the intensity distribution, and determining a driving amount of the member based on the optical path difference. The method further includes driving the member based on the determined driving amount.

    PLASMA PROCESSING APPARATUS AND ABNORMAL DISCHARGE CONTROL METHOD

    公开(公告)号:US20230060329A1

    公开(公告)日:2023-03-02

    申请号:US17899087

    申请日:2022-08-30

    Abstract: There is provided a plasma processing apparatus comprising: a chamber; a mounting stage mounting a substrate and a ring assembly on a periphery of the substrate; a fixation portion fixing at least one of the substrate and the ring assembly to the mounting stage; a heat transfer gas supply supplying heat transfer gas between the mounting stage and at least one of the substrate and the ring assembly; a heat transfer gas exhauster exhausting the heat transfer gas therefrom; an RF power supply supplying an RF signal for plasma generation; and a controller controlling the heat transfer gas supply so that pressure of the heat transfer gas is lower than that at the time of plasma processing for the substrate before performing the plasma processing for the substrate when at least one of the substrate and the ring assembly is mounted on the mounting stage.

    PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20180374682A1

    公开(公告)日:2018-12-27

    申请号:US16012852

    申请日:2018-06-20

    Abstract: A plasma processing method includes a gas supply step and a film forming step. In the gas supply step, a gaseous mixture containing a compound gas containing a silicon element and a halogen element, an oxygen-containing gas, and an additional gas containing the same halogen element as the halogen element contained in the compound gas and no silicon element is supplied into a chamber. In the film forming step, a protective film is formed on a surface of a member in the chamber by plasma of the gaseous mixture supplied into the chamber.

    PLASMA PROCESSING APPARATUS
    4.
    发明公开

    公开(公告)号:US20240030003A1

    公开(公告)日:2024-01-25

    申请号:US18351172

    申请日:2023-07-12

    Abstract: A plasma processing apparatus includes a plasma processing chamber, a substrate support disposed in the plasma processing chamber and including a lower electrode, an upper electrode disposed above the substrate support, a first RF signal generator coupled to the lower electrode and configured to generate a first RF signal, the first RF signal having a first power level during a first state in a repetition period, a second power level less than the first power level during a second state in the repetition period, and the second power level during a third state in the repetition period, and a second RF signal generator coupled to the lower electrode and configured to generate a second RF signal, the second RF signal having a third power level during the first state, a fourth power level greater than the third power level during the second state, and the third power level.

    CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS

    公开(公告)号:US20220148902A1

    公开(公告)日:2022-05-12

    申请号:US17586333

    申请日:2022-01-27

    Abstract: A method is for cleaning an edge ring. The edge ring includes an inner edge ring provided near a substrate mounted on an electrostatic chuck in a processing chamber, a central edge ring that is provided at an outer side of the inner edge ring and vertically movable by a moving mechanism, and an outer edge ring provided at an outer side of the central edge ring. The method includes applying a direct current voltage to the electrostatic chuck, and moving the central edge ring upward or downward.

    STAGE, SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE ATTRACTION METHOD

    公开(公告)号:US20220084800A1

    公开(公告)日:2022-03-17

    申请号:US17447227

    申请日:2021-09-09

    Abstract: A stage includes a base, and an electrostatic chuck disposed on the base and including n-pole electrodes therein. N is an integer of two or more. A power source is configured to apply n-phase voltages to the n-pole electrodes. The n of the n-phase corresponds to the n of the n-pole, respectively. The n-phase voltages have different phases from each other. Each of the n-phase voltages periodically switches between positive and negative. Each of the n-pole electrodes is disposed alternately in the electrostatic chuck.

    SUBSTRATE-PROCESSING APPARATUS
    7.
    发明申请

    公开(公告)号:US20250006541A1

    公开(公告)日:2025-01-02

    申请号:US18754701

    申请日:2024-06-26

    Abstract: A substrate-processing apparatus includes a substrate support that includes an electrostatic chuck, the electrostatic chuck including a support surface configured to support an annular member. The support surface includes a diffusion groove through which a heat transfer gas is diffused into a gap between the annular member and the support surface. The diffusion groove includes an annular groove provided concentrically with the electrostatic chuck; and a radial groove that is in communication with the annular groove and is provided from the annular groove in a radial direction of the electrostatic chuck.

    DEPOSITION METHOD AND PROCESSING APPARATUS
    8.
    发明公开

    公开(公告)号:US20230282457A1

    公开(公告)日:2023-09-07

    申请号:US18178801

    申请日:2023-03-06

    Abstract: A stage includes a base and an electrostatic chuck provided on the base and including N electrodes in the electrostatic chuck, where N is an integer greater than or equal to two. The stage a power supply configured to apply voltages of different N-phases to the respective N electrodes. Each of the voltages has a positive level and a negative level that periodically alternate. A center line of an electrode gap provided between adjacent electrodes is represented by x=x=r·cos(θ+2π(n−1)/N) and y=r·sin(θ+2π(n−1)/N).

    METHOD FOR DRIVING MEMBER AND PROCESSING APPARATUS

    公开(公告)号:US20190355557A1

    公开(公告)日:2019-11-21

    申请号:US16411559

    申请日:2019-05-14

    Abstract: There is provided a method for driving a member provided in a processing chamber. The method includes irradiating to the member measurement light having a wavelength that penetrates the member, detecting intensity distribution of reflected light based on reflected light from an upper surface of the member and reflected light from a bottom surface of the member, calculating an optical path difference by applying Fourier transform to a spectrum indicating the intensity distribution, and determining a driving amount of the member based on the optical path difference. The method further includes driving the member based on the determined driving amount.

Patent Agency Ranking