公开(公告)号：US06552626B2

公开(公告)日：2003-04-22

申请号：US09482175

申请日：2000-01-12

申请人： Thomas M. Sharpe ,  Donald A. Charlton ,  Richard W. Burns

发明人： Thomas M. Sharpe ,  Donald A. Charlton ,  Richard W. Burns

IPC分类号： H01P115

CPC分类号： H01P1/15

摘要： A high power PIN diode single pole double throw (SPDT) switch for use in radar systems transmitting at over 50 watts of power. These systems require a switch that will provide adequate isolation for the sensitive amplifier circuits in the receiver subsystem of the radar from the high power transmit pulses in the event there is a bias failure such that the PIN diodes are at zero bias. By utilizing one single pole single throw (SPST) switch assembly between the transmitter and the antenna and at least two SPST switch assemblies between the antenna and the receiver, this isolation is achieved.

摘要翻译： 高功率PIN二极管单极双掷（SPDT）开关，用于雷达系统，传输功率超过50瓦。 这些系统需要一个开关，这将为雷达的接收机子系统中的敏感放大器电路提供足够的隔离，以便在发生偏置故障时使PIN二极管处于零偏置的情况下从高功率发射脉冲。 通过在发射机和天线之间利用一个单极单掷（SPST）开关组件以及在天线和接收器之间的至少两个SPST开关组件，实现了这种隔离。