公开(公告)号：US20220166597A1

公开(公告)日：2022-05-26

申请号：US17434808

申请日：2020-03-25

申请人： The Texas A&M University System

发明人： Meng-Jie Hsiao ,  Cam V. Nguyen

IPC分类号： H04L5/14 ,  H03F3/24 ,  H01P5/12

摘要： Architectures of millimeter-wave (mm-wave) fully-integrated frequency-division duplex (FDD) transmitting-receiving (T/R) front-end (FE) modules include a duplexer (DUX), power amplifier (PA), and low noise amplifier (LNA) on a single semiconductor substrate to facilitate the development of system on a chip (SoC) for mm-wave 5th Generation (5G) wireless communications applications. The first FE module adopts a passive DUX consisting of Wilkinson power divider and ground-center-tap transformer to achieve high isolation between PA output and LNA inputs. Another FE module combines the advantages of passive DUX and power-efficient cancellation circuits to accomplish high TX-RX isolation and low noise performance at the same time. The DUX can stand alone as a single unit in a system and is used together with external PA and LNA provided in the system, or it can include its own internal PA and LNA to form a DUX FE module.

公开(公告)号：US20230036705A1

公开(公告)日：2023-02-02

申请号：US17787958

申请日：2021-01-29

申请人： The Texas A&M University System

发明人： Meng-Jie Hsiao ,  Cam V. Nguyen

IPC分类号： H04B1/525 ,  H04B1/12 ,  H04L5/14

摘要： Architectures of millimeter wave fully-integrated frequency-division duplex (FDD) transmitting-receiving (T/R) front-end (FE) modules include a duplexer (DUX), power amplifier (PA), and low noise amplifier (LNA) on a single semiconductor substrate to facilitate the development of system on a chip (SoC) for millimeter wave 5G wireless and next-generation communications applications. The entire balanced DUX module implements TX signals in differential mode, and RX signals in single-ended mode. LNA input is located at the center of a symmetrical plane of the entire FE module, resulting in an inherent ultra-high isolation between the differential PA output ports and the LNA input port across a ultra-wide bandwidth. The DUX can stand alone as a single unit in a system and is used together with external PA and LNA provided in the system, or it can include its own internal PA and LNA to form a DUX FE module.

公开(公告)号：US12074830B2

公开(公告)日：2024-08-27

申请号：US17434808

申请日：2020-03-25

申请人： The Texas A&M University System

发明人： Meng-Jie Hsiao ,  Cam V. Nguyen

IPC分类号： H04L5/14 ,  H01P5/12 ,  H03F3/24

CPC分类号： H04L5/1438 ,  H01P5/12 ,  H03F3/245 ,  H03F2200/294 ,  H03F2200/451

摘要： Architectures of millimeter-wave (mm-wave) fully-integrated frequency-division duplex (FDD) transmitting-receiving (T/R) front-end (FE) modules include a duplexer (DUX), power amplifier (PA), and low noise amplifier (LNA) on a single semiconductor substrate to facilitate the development of system on a chip (SoC) for mm-wave 5th Generation (5G) wireless communications applications. The first FE module adopts a passive DUX consisting of Wilkinson power divider and ground-center-tap transformer to achieve high isolation between PA output and LNA inputs. Another FE module combines the advantages of passive DUX and power-efficient cancellation circuits to accomplish high TX-RX isolation and low noise performance at the same time. The DUX can stand alone as a single unit in a system and is used together with external PA and LNA provided in the system, or it can include its own internal PA and LNA to form a DUX FE module.