Low Temperature Fabrication of Silicon Nitride Photonic Devices

    公开(公告)号:US20240210625A1

    公开(公告)日:2024-06-27

    申请号:US18395038

    申请日:2023-12-22

    IPC分类号: G02B6/136

    CPC分类号: G02B6/136 C23C16/401

    摘要: Disclosed herein is methods for fabricating ultra-low loss waveguides. One particular method may include: preparing a substrate including a lower cladding layer in a deposition chamber; flowing precursors including deuterated silane and nitrogen onto the lower cladding layer in the deposition chamber; subjecting the precursors to an inductively coupled plasma-plasma enhanced chemical vapor deposition (ICP-PECVD) process which disassociates the deuterated silane and nitrogen and deposits waveguide material of silicon nitride or silicon oxynitride onto the lower cladding layer; patterning the waveguide material into a patterned waveguide material; and depositing a top cladding layer on the patterned waveguide material, wherein the ICP-PECVD process occurs at a temperature less than or equal to 250° C. Advantageously, the ICP-PECVD process allows for deposition of low hydrogenated deposition of material layers which may allow for low temperature fabrication of ultra-low loss waveguides.

    Photonic Integrated Beamlines for 3D Magneto-Optical Trap

    公开(公告)号:US20240203616A1

    公开(公告)日:2024-06-20

    申请号:US18542341

    申请日:2023-12-15

    IPC分类号: G21K1/00

    CPC分类号: G21K1/003

    摘要: A device may include an atomic cell with a first wall. A device may include a photonic integrated circuit positioned parallel to the atomic cell first wall, the photonic integrated circuit comprising: a set of three grating emitters mounted on the photonic integrated circuit around a circumference with a spacing of around 120 degrees, wherein each grating emitter is etched to emit free-space beams on to the first wall of the atomic cell at a selected angle, wherein the selected angle in combination with the circumference results in the set of free-space beams intersecting at a location inside the atomic cell.