公开(公告)号：US20140183622A1

公开(公告)日：2014-07-03

申请号：US14135661

申请日：2013-12-20

Applicant: Texas Instruments Incorporated

Inventor： Haian LIN ,  Shuming XU ,  Jacek KOREC

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7806 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/47 ,  H01L29/66143 ,  H01L29/66712 ,  H01L29/872

Abstract: A semiconductor device containing a vertical power MOSFET with a planar gate and an integrated Schottky diode is formed by forming a source electrode on an extended drain of the vertical power MOSFET to form the Schottky diode and forming the source electrode on a source region of the vertical power MOSFET. The Schottky diode is connected through the source electrode to the source region. A drain electrode is formed at a bottom of a substrate of the semiconductor device. The Schottky diode is connected through the extended drain of the vertical power MOSFET to the drain electrode.

Abstract translation: 通过在垂直功率MOSFET的扩展漏极上形成源电极形成包含具有平面栅极和集成肖特基二极管的垂直功率MOSFET的半导体器件，以形成肖特基二极管并在垂直的源极区域上形成源电极 功率MOSFET。 肖特基二极管通过源电极连接到源极区域。 漏电极形成在半导体器件的衬底的底部。 肖特基二极管通过垂直功率MOSFET的扩展漏极连接到漏电极。

公开(公告)号：US20200220007A1

公开(公告)日：2020-07-09

申请号：US16821165

申请日：2020-03-17

Applicant: Texas Instruments Incorporated

Inventor： Haian LIN ,  Shuming XU ,  Jacek KOREC

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/47 ,  H01L29/872 ,  H01L29/08

Abstract: A semiconductor device containing a vertical power MOSFET with a planar gate and an integrated Schottky diode is formed by forming a source electrode on an extended drain of the vertical power MOSFET to form the Schottky diode and forming the source electrode on a source region of the vertical power MOSFET. The Schottky diode is connected through the source electrode to the source region. A drain electrode is formed at a bottom of a substrate of the semiconductor device. The Schottky diode is connected through the extended drain of the vertical power MOSFET to the drain electrode.