公开(公告)号：US20230253251A1

公开(公告)日：2023-08-10

申请号：US17669143

申请日：2022-02-10

Applicant: Texas Instruments Incorporated

Inventor： Qing Ran ,  Yang Liu ,  Joseph O. Liu

IPC: H01L21/78 ,  H01L21/268

CPC classification number: H01L21/78 ,  H01L21/268

Abstract: A method of manufacturing a semiconductor package includes forming a plurality of first cuts in a semiconductor wafer. The first cuts extend through a first portion of a thickness of the semiconductor wafer and include a first set of first cuts that are parallel to one another and a second set of first cuts that are parallel to one another and perpendicular to the first set of first cuts. In addition, the method includes forming a plurality of second cuts in the wafer after forming the first cuts. The second cuts are vertically aligned with the first cuts and extend through a second portion of the thickness of the semiconductor wafer. The second cuts include a first set of second cuts that are parallel to one another and a second set of second cuts that are parallel to one another and perpendicular to the first set of second cuts

公开(公告)号：US20230387036A1

公开(公告)日：2023-11-30

申请号：US17826764

申请日：2022-05-27

Applicant: Texas Instruments Incorporated

Inventor： Michael Todd Wyant ,  Joseph O. Liu ,  Christopher Daniel Manack

IPC: H01L23/544 ,  H01L23/31 ,  H01L23/495 ,  H01L23/00 ,  H01L21/66 ,  H01L21/56 ,  H01L21/268

CPC classification number: H01L23/544 ,  H01L23/3107 ,  H01L23/495 ,  H01L24/48 ,  H01L22/12 ,  H01L21/56 ,  H01L21/268 ,  H01L2224/48245 ,  H01L2223/5446

Abstract: A method includes performing a laser ablation process that removes a portion of a wafer to form a trench in a scribe region between adjacent die regions of the wafer, the trench extending from a first side of the wafer toward an opposite second side of the wafer, the trench extending through a metallization structure and an active circuit portion of the wafer, and a bottom of the trench spaced apart from the second side of the wafer. The method also includes performing a wafer expansion process that separates individual semiconductor dies from the wafer after the laser ablation process.

公开(公告)号：US11664276B2

公开(公告)日：2023-05-30

申请号：US16205692

申请日：2018-11-30

Applicant: Texas Instruments Incorporated

Inventor： Matthew John Sherbin ,  Michael Todd Wyant ,  Christopher Daniel Manack ,  Hiroyuki Sada ,  Shoichi Iriguchi ,  Genki Yano ,  Ming Zhu ,  Joseph O. Liu

IPC: H01L23/544 ,  H01L21/78 ,  B23K26/364 ,  H01L23/00 ,  H01L21/268

CPC classification number: H01L21/78 ,  B23K26/364 ,  H01L21/268 ,  H01L23/562

Abstract: A semiconductor die includes a substrate having a semiconductor surface layer bon a front side with active circuitry including at last one transistor therein and a back side. The sidewall edges of the semiconductor die have at least one damage region pair including an angled damage feature region relative to a surface normal of the semiconductor die that is above a damage region that is more normal to the surface normal of the die as compared to the angled damage feature region.