-
公开(公告)号:US10101382B2
公开(公告)日:2018-10-16
申请号:US15395907
申请日:2016-12-30
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Alex Paikin , Colin Johnson , Tathagata Chatterjee , Sameer Pendharkar
Abstract: In at least some embodiments, a system comprises a socket gate terminal configured to receive a first voltage to activate and inactivate a device under test (DUT) coupled to the socket gate terminal. The system also comprises a socket source terminal configured to provide a reference voltage to the DUT. The system further comprises a socket drain terminal configured to provide a second voltage to the DUT to stress the DUT when the DUT is inactive. The socket drain terminal is further configured to receive a third voltage to cause a current to flow through a pathway in the DUT between the socket drain terminal and the socket source terminal when the DUT is active. The socket drain terminal is further configured to provide a fourth voltage indicative of a resistance of the pathway in the DUT when the DUT is active and is heated to a temperature above an ambient temperature associated with the system.
-
公开(公告)号:US10571511B2
公开(公告)日:2020-02-25
申请号:US16130035
申请日:2018-09-13
Applicant: Texas Instruments Incorporated
Inventor: Alex Paikin , Colin Johnson , Tathagata Chatterjee , Sameer Pendharkar
Abstract: In at least some embodiments, a system comprises a socket gate terminal configured to receive a first voltage to activate and inactivate a device under test (DUT) coupled to the socket gate terminal. The system also comprises a socket source terminal configured to provide a reference voltage to the DUT. The system further comprises a socket drain terminal configured to provide a second voltage to the DUT to stress the DUT when the DUT is inactive. The socket drain terminal is further configured to receive a third voltage to cause a current to flow through a pathway in the DUT between the socket drain terminal and the socket source terminal when the DUT is active. The socket drain terminal is further configured to provide a fourth voltage indicative of a resistance of the pathway in the DUT when the DUT is active and is heated to a temperature above an ambient temperature associated with the system.
-