公开(公告)号：US11171002B2

公开(公告)日：2021-11-09

申请号：US16798823

申请日：2020-02-24

Applicant: TESSERA, INC.

Inventor： John C. Arnold ,  Anuja E. DeSilva ,  Nelson M. Felix ,  Chi-Chun Liu ,  Yann A. M. Mignot ,  Stuart A. Sieg

IPC: H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/66 ,  H01L21/8234

Abstract: Methods of forming fins include masking a region on a three-color hardmask fin pattern, leaving a fin of a first color exposed. The exposed fin of the first color is etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into a fin base layer using the fins of the first color and the fins of the third color.

公开(公告)号：US11031248B2

公开(公告)日：2021-06-08

申请号：US16508691

申请日：2019-07-11

Applicant: TESSERA, INC.

Inventor： Sean D. Burns ,  Nelson M. Felix ,  Chi-Chun Liu ,  Yann A. M. Mignot ,  Stuart A. Sieg

IPC: H01L21/308 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/033 ,  H01L21/8234

Abstract: A method for forming fins includes forming a three-color hardmask fin pattern on a fin base layer. The three-color hardmask fin pattern includes hardmask fins of three mutually selectively etchable compositions. Some of the fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color and that leaves at least one fin of the first color behind. The fins of the second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.

公开(公告)号：US20210280422A1

公开(公告)日：2021-09-09

申请号：US17328569

申请日：2021-05-24

Applicant: Tessera, Inc.

Inventor： Sean D. Burns ,  Lawrence A. Clevenger ,  Matthew E. Colburn ,  Nelson M. Felix ,  Sivananda K. Kanakasabapathy ,  Christopher J. Penny ,  Roger A. Quon ,  Nicole A. Saulnier

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/768 ,  H01L23/528 ,  H01L21/3213

Abstract: A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.

公开(公告)号：US11018007B2

公开(公告)日：2021-05-25

申请号：US16675630

申请日：2019-11-06

Applicant: TESSERA, INC.

Inventor： Sean D. Burns ,  Lawrence A. Clevenger ,  Matthew E. Colburn ,  Nelson M. Felix ,  Sivananda K. Kanakasabapathy ,  Christopher J. Penny ,  Roger A. Quon ,  Nicole A. Saulnier

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/768 ,  H01L23/528 ,  H01L21/3213 ,  H01L21/31 ,  H01L21/027 ,  H01L45/00 ,  H01L21/28 ,  H01L51/00

Abstract: A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.

公开(公告)号：US20210335619A1

公开(公告)日：2021-10-28

申请号：US17340915

申请日：2021-06-07

Applicant: Tessera, Inc.

Inventor： Sean D. Burns ,  Nelson M. Felix ,  Chi-Chun Liu ,  Yann A.M. Mignot ,  Stuart A. Sieg

IPC: H01L21/308 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/033 ,  H01L21/8234

Abstract: A method for forming fins includes forming a three-color hardmask fin pattern on a fin base layer. The three-color hardmask fin pattern includes hardmask fins of three mutually selectively etchable compositions. Some of the fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color and that leaves at least one fin of the first color behind. The fins of the second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.

公开(公告)号：US20200266066A1

公开(公告)日：2020-08-20

申请号：US16798823

申请日：2020-02-24

Applicant: TESSERA, INC.

Inventor： John C. Arnold ,  Anuja E. DeSilva ,  Nelson M. Felix ,  Chi-Chun Liu ,  Yann A.M. Mignot ,  Stuart A. Sieg

IPC: H01L21/033 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/308

Abstract: Methods of forming fins include masking a region on a three-color hardmask fin pattern, leaving a fin of a first color exposed. The exposed fin of the first color is etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into a fin base layer using the fins of the first color and the fins of the third color.