Semiconductor light emitting device and plant cultivating system
    1.
    发明授权
    Semiconductor light emitting device and plant cultivating system 失效
    半导体发光装置和植物栽培系统

    公开(公告)号:US07466023B2

    公开(公告)日:2008-12-16

    申请号:US10506508

    申请日:2003-03-06

    IPC分类号: H01L23/34

    摘要: Guard electrodes 2 which are electrically connected with a conductive portion of a cooling water passage 23 through connection lines 3 are respectively provided in the middle of a water inlet pipe 1 connected with a water inlet master pipe 10 and a water outlet pipe 6 connected with a water outlet master pipe 13 in M pieces of semiconductor laser units 4. At this time, since the guard electrode 2 has a potential equal to the conductive portion of the cooling water passage 23, the electric current hardly flows between the guard electrode 2 and the conductive portion of the cooling water passage 23. As a result, rusting is inhibited in the M pieces of semiconductor laser units 4, and a clogged piping is prevented in the cooling water passage 23.

    摘要翻译: 通过连接线3与冷却水通道23的导电部分电连接的保护电极2分别设置在与进水主管10和出水管6连接的进水管1的中部, 在M个半导体激光器单元4中的出水母管13上。此时,由于保护电极2的电位与冷却水通路23的导电部分相等,因此电流几乎不会在保护电极2和 冷却水通道23的导电部分。结果,M个半导体激光器单元4中的生锈被抑制,并且在冷却水通道23中阻止了堵塞的管道。

    Semiconductor light emitting device and plant cultivating system
    2.
    发明申请
    Semiconductor light emitting device and plant cultivating system 失效
    半导体发光装置和植物栽培系统

    公开(公告)号:US20050151140A1

    公开(公告)日:2005-07-14

    申请号:US10506508

    申请日:2003-03-06

    摘要: Guard electrodes 2 which are electrically connected with a conductive portion of a cooling water passage 23 through connection lines 3 are respectively provided in the middle of a water inlet pipe 1 connected with a water inlet master pipe 10 and a water outlet pipe 6 connected with a water outlet master pipe 13 in M pieces of semiconductor laser units 4. At this time, since the guard electrode 2 has a potential equal to the conductive portion of the cooling water passage 23, the electric current hardly flows between the guard electrode 2 and the conductive portion of the cooling water passage 23. As a result, rusting is inhibited in the M pieces of semiconductor laser units 4, and a clogged piping is prevented in the cooling water passage 23.

    摘要翻译: 通过连接线3与冷却水通道23的导电部分电连接的保护电极2分别设置在与进水主管10和出水管6连接的进水管1的中部, M个半导体激光器单元4中的出水主管13。 此时,由于保护电极2具有与冷却水通路23的导电部相等的电位,因此电流几乎不在保护电极2与冷却水通路23的导电部之间流动。 结果,M片半导体激光器单元4中的生锈被抑制,并且在冷却水通道23中阻止了堵塞的管道。