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公开(公告)号：US07940328B2
公开(公告)日：2011-05-10
申请号：US11788925
申请日：2007-04-23
Applicant: Takashi Abe , Ryoji Suzuki , Yoshiharu Kudoh
Inventor： Takashi Abe , Ryoji Suzuki , Yoshiharu Kudoh
IPC: H04N5/225
CPC classification number: H01L27/14603 , H01L27/14636
Abstract: A solid-state imaging device is provided. The solid-state imaging device includes an imaging area that includes arrayed pixels having photoelectric converting units and transistor elements; and a peripheral circuit, in which a wiring line in the imaging area that is shifted based on pupil correction amount and a wiring line in the peripheral circuit that is not shifted are connected through a connection expanded portion integrally formed with one or both of the wiring lines.
Abstract translation: 提供固态成像装置。 固态成像装置包括具有光电转换单元和晶体管元件的排列像素的成像区域; 以及外围电路，其中基于瞳孔校正量移位的成像区域中的布线和外围电路中未移位的布线通过与一个或两个布线一体形成的连接扩展部分连接 线条。
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2.发明申请SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, CAMERA, AND ELECTRONIC DEVICE 有权固态成像装置，其制造方法，相机和电子装置公开(公告)号：US20110102620A1
公开(公告)日：2011-05-05
申请号：US12910068
申请日：2010-10-22
Applicant: Yorito Sakano , Takashi Abe , Keiji Mabuchi , Ryoji Suzuki , Hiroyuki Mori , Yoshiharu Kudoh , Fumihiko Koga , Takeshi Yanagita , Kazunobu Ota
Inventor： Yorito Sakano , Takashi Abe , Keiji Mabuchi , Ryoji Suzuki , Hiroyuki Mori , Yoshiharu Kudoh , Fumihiko Koga , Takeshi Yanagita , Kazunobu Ota
IPC: H04N5/228 , H01L31/06 , H01L31/18 , H03F3/08 , H01L27/146
CPC classification number: H04N5/361 , H01L27/14609 , H01L27/14612 , H01L27/14614 , H01L27/14623 , H01L27/14636 , H01L27/14641 , H01L27/14643 , H01L27/14689 , H04N5/2176 , H04N5/374 , H04N5/37457 , H04N5/378
Abstract: A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.
Abstract translation: 提供了一种固态成像装置，其包括：光电二极管，其具有为每个像素分割形成的第一导电类型半导体区域; 在与所述光电二极管相邻的区域经由栅极绝缘层在所述半导体衬底上形成的第一导电型转移栅电极，以及发射并累积在所述光电二极管中的信号电荷; 读取对应于信号电荷或信号电荷的电压的信号读取单元; 以及反射层感应电极，其在覆盖所述光电二极管的一部分或全部的区域中，经由所述栅极绝缘层在所述半导体衬底上形成，并且由具有功函数的导体或半导体构成。 通过反转层感应电极在半导体区域的反型层感应电极侧的表面上积累第二导电型载体而形成反转层。
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3.发明授权Solid state imaging device with wiring lines shifted for pupil correction and simplified wiring pattern and method of manufacturing the same 有权具有移位用于光瞳校正和简化布线图案的布线的固态成像装置及其制造方法公开(公告)号：US08866941B2
公开(公告)日：2014-10-21
申请号：US13104604
申请日：2011-05-10
Applicant: Takashi Abe , Ryoji Suzuki , Yoshiharu Kudoh
Inventor： Takashi Abe , Ryoji Suzuki , Yoshiharu Kudoh
IPC: H04N9/64 , H01L27/146
CPC classification number: H01L27/14603 , H01L27/14636
Abstract: A solid-state imaging device is provided. The solid-state imaging device includes an imaging area that includes arrayed pixels having photoelectric converting units and transistor elements; and a peripheral circuit, in which a wiring line in the imaging area that is shifted based on pupil correction amount and a wiring line in the peripheral circuit that is not shifted are connected through a connection expanded portion integrally formed with one or both of the wiring lines.
Abstract translation: 提供固态成像装置。 固态成像装置包括具有光电转换单元和晶体管元件的排列像素的成像区域; 以及外围电路，其中基于瞳孔校正量移位的成像区域中的布线和外围电路中未移位的布线通过与一个或两个布线一体形成的连接扩展部分连接 线条。
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4.发明申请公开(公告)号：US20070273779A1
公开(公告)日：2007-11-29
申请号：US11788925
申请日：2007-04-23
Applicant: Takashi Abe , Ryoji Suzuki , Yoshiharu Kudoh
Inventor： Takashi Abe , Ryoji Suzuki , Yoshiharu Kudoh
IPC: H04N5/335
CPC classification number: H01L27/14603 , H01L27/14636
Abstract: A solid-state imaging device is provided. The solid-state imaging device includes an imaging area that includes arrayed pixels having photoelectric converting units and transistor elements; and a peripheral circuit, in which a wiring line in the imaging area that is shifted based on pupil correction amount and a wiring line in the peripheral circuit that is not shifted are connected through a connection expanded portion integrally formed with one or both of the wiring lines.
Abstract translation: 提供固态成像装置。 固态成像装置包括具有光电转换单元和晶体管元件的排列像素的成像区域; 以及外围电路，其中基于瞳孔校正量移位的成像区域中的布线和外围电路中未移位的布线通过与一个或两个布线一体形成的连接扩展部分连接 线条。
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5.发明授权Solid-state imaging device, manufacturing method thereof, camera, and electronic device 有权固态成像装置，其制造方法，相机和电子装置公开(公告)号：US08872953B2
公开(公告)日：2014-10-28
申请号：US12910068
申请日：2010-10-22
Applicant: Yorito Sakano , Takashi Abe , Keiji Mabuchi , Ryoji Suzuki , Hiroyuki Mori , Yoshiharu Kudoh , Fumihiko Koga , Takeshi Yanagita , Kazunobu Ota
Inventor： Yorito Sakano , Takashi Abe , Keiji Mabuchi , Ryoji Suzuki , Hiroyuki Mori , Yoshiharu Kudoh , Fumihiko Koga , Takeshi Yanagita , Kazunobu Ota
IPC: H04N3/14 , H04N5/335 , H01L27/146 , H04N5/3745
CPC classification number: H04N5/361 , H01L27/14609 , H01L27/14612 , H01L27/14614 , H01L27/14623 , H01L27/14636 , H01L27/14641 , H01L27/14643 , H01L27/14689 , H04N5/2176 , H04N5/374 , H04N5/37457 , H04N5/378
Abstract: A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.
Abstract translation: 提供了一种固态成像装置，其包括：光电二极管，其具有为每个像素分割形成的第一导电类型半导体区域; 在与所述光电二极管相邻的区域经由栅极绝缘层在所述半导体衬底上形成的第一导电型转移栅电极，以及发射并累积在所述光电二极管中的信号电荷; 读取对应于信号电荷或信号电荷的电压的信号读取单元; 以及反射层感应电极，其在覆盖所述光电二极管的一部分或全部的区域中，经由所述栅极绝缘层在所述半导体衬底上形成，并且由具有功函数的导体或半导体构成。 通过反转层感应电极在半导体区域的反型层感应电极侧的表面上积累第二导电型载体而形成反转层。
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Patent Agency Ranking
6.发明申请公开(公告)号：US20110285901A1
公开(公告)日：2011-11-24
申请号：US13104604
申请日：2011-05-10
Applicant: Takashi Abe , Ryoji Suzuki , Yoshiharu Kudoh
Inventor： Takashi Abe , Ryoji Suzuki , Yoshiharu Kudoh
IPC: H04N5/225 , H01L31/18 , H01L27/146
CPC classification number: H01L27/14603 , H01L27/14636
Abstract: A solid-state imaging device is provided. The solid-state imaging device includes an imaging area that includes arrayed pixels having photoelectric converting units and transistor elements; and a peripheral circuit, in which a wiring line in the imaging area that is shifted based on pupil correction amount and a wiring line in the peripheral circuit that is not shifted are connected through a connection expanded portion integrally formed with one or both of the wiring lines.
Abstract translation: 提供固态成像装置。 固态成像装置包括具有光电转换单元和晶体管元件的排列像素的成像区域; 以及外围电路，其中基于瞳孔校正量移位的成像区域中的布线和外围电路中未移位的布线通过与一个或两个布线一体形成的连接扩展部分连接 线条。
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公开(公告)号：US07485903B2
公开(公告)日：2009-02-03
申请号：US10979707
申请日：2004-11-02
Applicant: Takashi Abe , Ryoji Suzuki , Keiji Mabuchi , Testuya Iizuka , Takahisa Ueno , Tsutomu Haruta
Inventor： Takashi Abe , Ryoji Suzuki , Keiji Mabuchi , Testuya Iizuka , Takahisa Ueno , Tsutomu Haruta
IPC: H01L27/148
CPC classification number: H01L27/14603 , H01L27/14609 , H01L27/14643
Abstract: A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.
Abstract translation: 提供了一种固态成像装置，其具有为每个像素实现良好接触的布置。 在固态成像装置中，在光电转换部的激活区域形成阱接触部。 阱接触部分固定在其中以预定电位设置像素的光电转换部分和晶体管的阱。
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公开(公告)号：US08134625B2
公开(公告)日：2012-03-13
申请号：US12314674
申请日：2008-12-15
Applicant: Takashi Abe , Ryoji Suzuki
Inventor： Takashi Abe , Ryoji Suzuki
IPC: H04N5/335
CPC classification number: H04N5/3572 , H01L27/14603
Abstract: Disclosed is a solid-state imaging device which includes an imaging region including pixels arranged two-dimensionally, each of the pixels including a photoelectric conversion element and a plurality of pixel transistors for reading out signals outputted from the photoelectric conversion element, and wirings formed on stacked layers for driving each of the pixels. A shading part between the pixels is formed by combining first and second wirings selected from the wirings.
Abstract translation: 公开了一种固态成像装置，其包括：成像区域，包括二维排列的像素，每个像素包括光电转换元件和用于读出从光电转换元件输出的信号的多个像素晶体管，以及形成在 用于驱动每个像素的堆叠层。 通过组合从布线中选择的第一和第二布线形成像素之间的阴影部分。
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公开(公告)号：US07816711B2
公开(公告)日：2010-10-19
申请号：US11824088
申请日：2007-06-29
Applicant: Takashi Abe , Ryoji Suzuki , Keiji Mabuchi , Testuya Iizuka , Takahisa Ueno , Tsutomu Haruta
Inventor： Takashi Abe , Ryoji Suzuki , Keiji Mabuchi , Testuya Iizuka , Takahisa Ueno , Tsutomu Haruta
IPC: H01L31/062
CPC classification number: H01L27/14603 , H01L27/14609 , H01L27/14643
Abstract: A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.
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公开(公告)号：US20090207291A1
公开(公告)日：2009-08-20
申请号：US12314674
申请日：2008-12-15
Applicant: Takashi Abe , Ryoji Suzuki
Inventor： Takashi Abe , Ryoji Suzuki
IPC: H04N5/335
CPC classification number: H04N5/3572 , H01L27/14603
Abstract: Disclosed is a solid-state imaging device which includes an imaging region including pixels arranged two-dimensionally, each of the pixels including a photoelectric conversion element and a plurality of pixel transistors for reading out signals outputted from the photoelectric conversion element, and wirings formed on stacked layers for driving each of the pixels. A shading part between the pixels is formed by combining first and second wirings selected from the wirings.
Abstract translation: 公开了一种固态成像装置，其包括：成像区域，包括二维排列的像素，每个像素包括光电转换元件和用于读出从光电转换元件输出的信号的多个像素晶体管，以及形成在 用于驱动每个像素的堆叠层。 通过组合从布线中选择的第一和第二布线形成像素之间的阴影部分。
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