公开(公告)号：US20230345736A1

公开(公告)日：2023-10-26

申请号：US18341793

申请日：2023-06-27

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Chenchen Jacob Wang ,  Bo-Feng Young ,  Yu-Ming Lin ,  Chi On Chui ,  Sai-Hooi Yeong

IPC分类号： H10B53/30 ,  H01L27/07 ,  H01L27/06 ,  H01L23/522

CPC分类号： H10B53/30 ,  H01L27/0733 ,  H01L28/60 ,  H01L27/0629 ,  H01L23/5223 ,  H01L21/56

摘要： A ferroelectric device structure includes an array of ferroelectric capacitors overlying a substrate, first metal interconnect structures electrically connecting each of first electrodes of the array of ferroelectric capacitors to a first metal pad embedded in a dielectric material layer, and second metal interconnect structures electrically connecting each of the second electrodes of the array of ferroelectric capacitors to a second metal pad embedded in the dielectric material layer. The second metal pad may be vertically spaced from the substrate by a same vertical separation distance as the first metal pad is from the substrate. First metal lines laterally extending along a first horizontal direction may electrically connect the first electrodes to the first metal pad, and second metal lines laterally extending along the first horizontal direction may electrically connect each of the second electrodes to the second metal pad.

公开(公告)号：US11183504B2

公开(公告)日：2021-11-23

申请号：US16852662

申请日：2020-04-20

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Chenchen Jacob Wang ,  Yu-Ming Lin ,  Chi On Chui ,  Sai-Hooi Yeong ,  Bo-Feng Young

IPC分类号： H01L27/11507 ,  H01L27/07 ,  H01L27/06 ,  H01L23/522 ,  H01L49/02 ,  H01L21/56

摘要： A ferroelectric device structure includes an array of ferroelectric capacitors overlying a substrate, first metal interconnect structures electrically connecting each of first electrodes of the array of ferroelectric capacitors to a first metal pad embedded in a dielectric material layer, and second metal interconnect structures electrically connecting each of the second electrodes of the array of ferroelectric capacitors to a second metal pad embedded in the dielectric material layer. The second metal pad may be vertically spaced from the substrate by a same vertical separation distance as the first metal pad is from the substrate. First metal lines laterally extending along a first horizontal direction may electrically connect the first electrodes to the first metal pad, and second metal lines laterally extending along the first horizontal direction may electrically connect each of the second electrodes to the second metal pad.

公开(公告)号：US20220028875A1

公开(公告)日：2022-01-27

申请号：US17496857

申请日：2021-10-08

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Chenchen Jacob Wang ,  Yu-Ming Lin ,  Chi On Chui ,  Sai-Hooi Yeong ,  Bo-Feng Young

IPC分类号： H01L27/11507 ,  H01L49/02 ,  H01L27/06 ,  H01L27/07 ,  H01L23/522

摘要： A ferroelectric device structure includes an array of ferroelectric capacitors overlying a substrate, first metal interconnect structures electrically connecting each of first electrodes of the array of ferroelectric capacitors to a first metal pad embedded in a dielectric material layer, and second metal interconnect structures electrically connecting each of the second electrodes of the array of ferroelectric capacitors to a second metal pad embedded in the dielectric material layer. The second metal pad may be vertically spaced from the substrate by a same vertical separation distance as the first metal pad is from the substrate. First metal lines laterally extending along a first horizontal direction may electrically connect the first electrodes to the first metal pad, and second metal lines laterally extending along the first horizontal direction may electrically connect each of the second electrodes to the second metal pad.

公开(公告)号：US11729994B2

公开(公告)日：2023-08-15

申请号：US17496857

申请日：2021-10-08

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Chenchen Jacob Wang ,  Yu-Ming Lin ,  Chi On Chui ,  Sai-Hooi Yeong ,  Bo-Feng Young

IPC分类号： H10B53/30 ,  H01L27/07 ,  H01L27/06 ,  H01L23/522 ,  H01L21/56 ,  H01L49/02

CPC分类号： H10B53/30 ,  H01L23/5223 ,  H01L27/0629 ,  H01L27/0733 ,  H01L28/60 ,  H01L21/56

摘要： A ferroelectric device structure includes an array of ferroelectric capacitors overlying a substrate, first metal interconnect structures electrically connecting each of first electrodes of the array of ferroelectric capacitors to a first metal pad embedded in a dielectric material layer, and second metal interconnect structures electrically connecting each of the second electrodes of the array of ferroelectric capacitors to a second metal pad embedded in the dielectric material layer. The second metal pad may be vertically spaced from the substrate by a same vertical separation distance as the first metal pad is from the substrate. First metal lines laterally extending along a first horizontal direction may electrically connect the first electrodes to the first metal pad, and second metal lines laterally extending along the first horizontal direction may electrically connect each of the second electrodes to the second metal pad.

公开(公告)号：US20210327888A1

公开(公告)日：2021-10-21

申请号：US16852662

申请日：2020-04-20

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Chenchen Jacob WANG ,  Yu-Ming Lin ,  Chi On Chui ,  Sai-Hooi Yeong ,  Bo-Feng Young

IPC分类号： H01L27/11507 ,  H01L49/02 ,  H01L27/07

摘要： A ferroelectric device structure includes an array of ferroelectric capacitors overlying a substrate, first metal interconnect structures electrically connecting each of first electrodes of the array of ferroelectric capacitors to a first metal pad embedded in a dielectric material layer, and second metal interconnect structures electrically connecting each of the second electrodes of the array of ferroelectric capacitors to a second metal pad embedded in the dielectric material layer. The second metal pad may be vertically spaced from the substrate by a same vertical separation distance as the first metal pad is from the substrate. First metal lines laterally extending along a first horizontal direction may electrically connect the first electrodes to the first metal pad, and second metal lines laterally extending along the first horizontal direction may electrically connect each of the second electrodes to the second metal pad.