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    TRENCH ISOLATION STRUCTURE FOR SCALED PIXEL REGION
    3.
    发明公开
    TRENCH ISOLATION STRUCTURE FOR SCALED PIXEL REGION 审中-公开

    公开(公告)号：US20240332332A1

    公开(公告)日：2024-10-03

    申请号：US18733947

    申请日：2024-06-05

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Cheng Yu Huang ,  Wei-Chieh Chiang ,  Keng-Yu Chou ,  Tzu-Hsuan Hsu

    IPC分类号： H01L27/146

    CPC分类号： H01L27/1463 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14683

    摘要： The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate having a first side and a second side opposing the first side. The substrate has one or more sidewalls defining a trench extending along opposing sides of a pixel region having a first width. An isolation structure including one or more dielectric materials is disposed within the trench. The isolation structure has a second width. An image sensing element and a focal region are disposed within the pixel region. The focal region is configured to receive incident radiation along the second side of the substrate. A ratio of the second width to the first width is in a range of between approximately 0.1 and approximately 0.2, so that the focal region is completely confined between interior sidewall of the isolation structure facing the image sensing element.

    SEMICONDUCTOR IMAGE SENSOR
    7.
    发明申请
    SEMICONDUCTOR IMAGE SENSOR 审中-公开

    公开(公告)号：US20200111822A1

    公开(公告)日：2020-04-09

    申请号：US16706189

    申请日：2019-12-06

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    发明人： Keng-Yu Chou ,  Wei-Chieh Chiang ,  Chen-Jong Wang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto

    IPC分类号： H01L27/146

    摘要： A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors arranged in an array, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, a reflective grid disposed over the isolation grid on the back side of the substrate, an a low-n grid disposed over the back side of the substrate and overlapping the reflective grid from a top view. A depth of the reflective grid is less than a depth of the isolation grid. A width of the low-n grid is greater than a width of the reflective grid.

    TRENCH ISOLATION STRUCTURE FOR IMAGE SENSORS
    10.
    发明公开
    TRENCH ISOLATION STRUCTURE FOR IMAGE SENSORS 审中-公开

    公开(公告)号：US20240021644A1

    公开(公告)日：2024-01-18

    申请号：US18366858

    申请日：2023-08-08

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Cheng Yu Huang ,  Chun-Hao Chuang ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Chin-Chia Kuo ,  Wen-Hau Wu ,  Hua-Mao Chen ,  Chih-Kung Chang

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14632 ,  H01L27/14687 ,  H01L27/14643

    摘要： Various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. In some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. The array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. The inter-pixel trench isolation structure is in the substrate. Further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. The inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation. The low-transmission layer may, for example, be or comprise metal and/or some other suitable material(s).