公开(公告)号：US20180151353A1

公开(公告)日：2018-05-31

申请号：US15725744

申请日：2017-10-05

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： En-Ping Lin ,  Yi-Wei Chiu ,  Tzu-Chan Weng ,  Wen-Zhong Ho

IPC分类号： H01L21/02 ,  H01L21/762 ,  H01L21/302 ,  C23C16/40

CPC分类号： H01L21/02129 ,  C23C16/401 ,  H01L21/02008 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02389 ,  H01L21/302 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/6719 ,  H01L21/68757 ,  H01L21/76224 ,  H01L21/76243

摘要： A method includes etching a first oxide layer in a wafer. The etching is performed in an etcher having a top plate overlapping the wafer, and the top plate is formed of a non-oxygen-containing material. The method further includes etching a nitride layer underlying the first oxide layer in the etcher until a top surface of a second oxide layer underlying the nitride layer is exposed. The wafer is then removed from the etcher, with the top surface of the second oxide layer exposed when the wafer is removed.

公开(公告)号：US20200043720A1

公开(公告)日：2020-02-06

申请号：US16600091

申请日：2019-10-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： En-Ping Lin ,  Yi-Wei Chiu ,  Tzu-Chan Weng ,  Wen-Zhong Ho

IPC分类号： H01L21/02 ,  H01L21/302 ,  C23C16/40 ,  H01L21/762 ,  H01L21/67 ,  H01L21/308 ,  H01L21/311 ,  H01L21/687

摘要： A method includes etching a first oxide layer in a wafer. The etching is performed in an etcher having a top plate overlapping the wafer, and the top plate is formed of a non-oxygen-containing material. The method further includes etching a nitride layer underlying the first oxide layer in the etcher until a top surface of a second oxide layer underlying the nitride layer is exposed. The wafer is then removed from the etcher, with the top surface of the second oxide layer exposed when the wafer is removed.

公开(公告)号：US11120986B2

公开(公告)日：2021-09-14

申请号：US16600091

申请日：2019-10-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： En-Ping Lin ,  Yi-Wei Chiu ,  Tzu-Chan Weng ,  Wen-Zhong Ho

IPC分类号： H01L21/02 ,  H01L21/302 ,  H01L21/762 ,  C23C16/40 ,  H01L21/687 ,  H01L21/311 ,  H01L21/308 ,  H01L21/67

摘要： A method includes etching a first oxide layer in a wafer. The etching is performed in an etcher having a top plate overlapping the wafer, and the top plate is formed of a non-oxygen-containing material. The method further includes etching a nitride layer underlying the first oxide layer in the etcher until a top surface of a second oxide layer underlying the nitride layer is exposed. The wafer is then removed from the etcher, with the top surface of the second oxide layer exposed when the wafer is removed.