公开(公告)号：US11532607B2

公开(公告)日：2022-12-20

申请号：US16996986

申请日：2020-08-19

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chun-Chia Hsu ,  Tung-Heng Hsieh ,  Yung-Feng Chang ,  Bao-Ru Young ,  Jam-Wem Lee ,  Chih-Hung Wang

IPC分类号： H01L27/02 ,  H01L29/06 ,  H01L29/861

摘要： Electrostatic discharge (ESD) structures are provided. An ESD structure includes a semiconductor substrate, a first epitaxy region with a first type of conductivity over the semiconductor substrate, a second epitaxy region with a second type of conductivity over the semiconductor substrate, and a plurality of first semiconductor layers and a plurality of second semiconductor layers. The first semiconductor layers and the second semiconductor layers are alternatingly stacked over the semiconductor substrate and between the first and second epitaxy regions. Each of the first and second semiconductor layers has a first side contacting the first epitaxy region and a second side contacting the second epitaxy region, and the first side is opposite the second side.

公开(公告)号：US11527527B2

公开(公告)日：2022-12-13

申请号：US16880939

申请日：2020-05-21

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yung-Feng Chang ,  Bao-Ru Young ,  Tung-Heng Hsieh ,  Chun-Chia Hsu

IPC分类号： H01L27/02 ,  H01L21/82 ,  G06F30/392 ,  H01L27/092 ,  H01L21/8238

摘要： Provided is a tap cell including a substrate, a first well, a second well, a first doped region, and the second doped region. The substrate has a first region and a second region. The first well has a first dopant type and includes a first portion disposed in the first region and a second portion extending into the second region. The second well has a second dopant type and includes a third portion disposed in the second region and a fourth portion extending into the first region. The first doped region having the first dopant type is disposed in the second portion of the first well and the third portion of the second well along the second region. The second doped region having the second dopant type is disposed in the first portion of the first well and the fourth portion of the second well along the first region.

公开(公告)号：US20210366895A1

公开(公告)日：2021-11-25

申请号：US16880939

申请日：2020-05-21

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yung-Feng Chang ,  Bao-Ru Young ,  Tung-Heng Hsieh ,  Chun-Chia Hsu

IPC分类号： H01L27/02 ,  G06F30/392 ,  H01L21/82

摘要： Provided is a tap cell including a substrate, a first well, a second well, a first doped region, and the second doped region. The substrate has a first region and a second region. The first well has a first dopant type and includes a first portion disposed in the first region and a second portion extending into the second region. The second well has a second dopant type and includes a third portion disposed in the second region and a fourth portion extending into the first region. The first doped region having the first dopant type is disposed in the second portion of the first well and the third portion of the second well along the second region. The second doped region having the second dopant type is disposed in the first portion of the first well and the fourth portion of the second well along the first region.