公开(公告)号：US20250164690A1

公开(公告)日：2025-05-22

申请号：US18593331

申请日：2024-03-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hung Lin ,  Yu-Hao Kuo ,  Chih-Hao Yu ,  Ren-Fen Tsui ,  Jui Lin Chao ,  Hsing-Kuo Hsia ,  Kuo-Chung Yee ,  Chen-Hua Yu

IPC: G02B6/122 ,  G02B6/12 ,  G02B6/13

Abstract: Optical devices and methods of manufacture are presented in which metallization layers are formed over a first active layer of first optical components, a first opening is formed through the metallization layers, a first semiconductor die is bonded over the metallization layers, and a laser die is bonded over the metallization layers, wherein after the bonding the laser die a first mirror located within the laser die is aligned with a second mirror through the first opening.

公开(公告)号：US20250031434A1

公开(公告)日：2025-01-23

申请号：US18353389

申请日：2023-07-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hung Lin ,  Jih-Churng Twu ,  Su-Chun Yang ,  Shih-Peng Tai ,  Yu-Hao Kuo

IPC: H01L21/822 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065

Abstract: A method includes bonding a first semiconductor die and a second semiconductor die to a substrate, where a gap is disposed between a first sidewall of the first semiconductor die and a second sidewall of the second semiconductor die, performing a plasma treatment to dope top surfaces and sidewalls of each of the first semiconductor die and the second semiconductor die with a first dopant, where a concentration of the first dopant in the first sidewall decreases in a vertical direction from a top surface of the first semiconductor die towards a bottom surface of the first semiconductor die, and a concentration of the first dopant in the second sidewall decreases in a vertical direction from a top surface of the second semiconductor die towards a bottom surface of the second semiconductor die, and filling the gap with a spin-on dielectric material.