公开(公告)号：US20190204730A1

公开(公告)日：2019-07-04

申请号：US16228339

申请日：2018-12-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Yue LIN ,  Hsuan-Chen CHEN ,  Chih-Cheng LIN ,  Hsin-Chang LEE ,  Yao-Ching KU ,  Wei-Jen LO ,  Anthony YEN ,  Chin-Hsiang LIN ,  Mark CHIEN

IPC: G03F1/62 ,  G03F1/24

CPC classification number: G03F1/62 ,  G03F1/24

Abstract: A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.

公开(公告)号：US20210313212A1

公开(公告)日：2021-10-07

申请号：US16837938

申请日：2020-04-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Chi LIN ,  Huai-Tei YANG ,  Lun-Kuang TAN ,  Wei-Jen LO ,  Chih-Teng LIAO

IPC: H01L21/683 ,  H01L21/3065 ,  H01J37/32

Abstract: A method for cleaning debris and contamination from an etching apparatus is provided. The etching apparatus includes a process chamber, a source of radio frequency power, an electrostatic chuck within the process chamber, a chuck electrode, and a source of DC power connected to the chuck electrode. The method of cleaning includes placing a substrate on a surface of the electrostatic chuck, applying a plasma to the substrate, thereby creating a positively charged surface on the surface of the substrate, applying a negative voltage or a radio frequency pulse to the electrode chuck, thereby making debris particles and/or contaminants from the surface of the electrostatic chuck negatively charged and causing them to attach to the positively charged surface of the substrate, and removing the substrate from the etching apparatus thereby removing the debris particles and/or contaminants from the etching apparatus.

公开(公告)号：US20180173092A1

公开(公告)日：2018-06-21

申请号：US15381033

申请日：2016-12-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Yue LIN ,  Hsuan-Chen CHEN ,  Chih-Cheng LIN ,  Hsin-Chang LEE ,  Yao-Ching KU ,  Wei-Jen LO ,  Anthony YEN ,  Chin-Hsiang LIN ,  Mark CHIEN

IPC: G03F1/62 ,  G03F1/22

CPC classification number: G03F1/62 ,  G03F1/24

Abstract: A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.