BACKSIDE INTERCONNECT STRUCTURES IN INTEGRATED CIRCUIT CHIPS

    公开(公告)号:US20230046911A1

    公开(公告)日:2023-02-16

    申请号:US17852594

    申请日:2022-06-29

    Abstract: The present disclosure describes a structure that includes a substrate with first and second sides, a device layer disposed on the first side of the substrate, having a fault detection area on a back-side surface of the device layer configured to emit a signal that is indicative of a presence or an absence of a defect in the device layer, a first interconnect structure disposed on a front-side of the device layer, and a second interconnect structure disposed on the second side of the substrate, having a metal-free region aligned with the fault detection area and a first metal layer having first and second conductive lines disposed substantially parallel to each other. First and second sidewalls of the first and second conductive lines, respectively, facing each other are substantially aligned with first and second sides of the fault detection area.

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