公开(公告)号：US20220344464A1

公开(公告)日：2022-10-27

申请号：US17238983

申请日：2021-04-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Chuang CHIU ,  Chia-Hao CHANG ,  Cheng-Chi CHUANG ,  Chih-Hao WANG ,  Huan-Chieh SU ,  Chun-Yuan CHEN ,  Li-Zhen YU ,  Yu-Ming LIN

IPC: H01L29/06 ,  H01L21/8234 ,  H01L29/423

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.