公开(公告)号：US20190165180A1

公开(公告)日：2019-05-30

申请号：US15904041

申请日：2018-02-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Lin CHEN ,  Shiuan-Jeng Lin ,  Wen-Chih Chiang ,  Po-Ming Chen ,  Tza-Hao Wang

IPC: H01L29/788 ,  H01L29/49 ,  H01L29/51 ,  H01L29/08 ,  H01L29/423 ,  H01L21/28 ,  H01L21/3115 ,  H01L21/266 ,  H01L29/66

Abstract: A non-volatile memory cell is disclosed. In one example, the non-volatile memory cell includes: a substrate; a first oxide layer over the substrate; a floating gate over the first oxide layer; a second oxide layer over the floating gate; and a control gate at least partially over the second oxide layer. At least one of the first oxide layer and the second oxide layer comprises fluorine.

公开(公告)号：US10586705B2

公开(公告)日：2020-03-10

申请号：US15904041

申请日：2018-02-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Lin Chen ,  Shiuan-Jeng Lin ,  Wen-Chih Chiang ,  Po-Ming Chen ,  Tza-Hao Wang

IPC: H01L29/66 ,  H01L21/28 ,  H01L29/51 ,  H01L21/3115 ,  H01L29/788 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/266

Abstract: A non-volatile memory cell is disclosed. In one example, the non-volatile memory cell includes: a substrate; a first oxide layer over the substrate; a floating gate over the first oxide layer; a second oxide layer over the floating gate; and a control gate at least partially over the second oxide layer. At least one of the first oxide layer and the second oxide layer comprises fluorine.