公开(公告)号：US20220197132A1

公开(公告)日：2022-06-23

申请号：US17692912

申请日：2022-03-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po Hsuan Li ,  Yu-Ting Lin ,  Yun-Yue Lin ,  Huai-Tei Yang

IPC: G03F1/62 ,  G03F7/20

Abstract: A pellicle comprises a stress-controlled metal layer. The stress in said metal layer may be between about 500-50 MPa. A method of manufacturing a pellicle comprising a metal layer includes deposing said metal layer by plasma physical vapor deposition. Process parameters are selected so as to produce a desired stress value in said metal layer, such as between about 500-50 MPa.

公开(公告)号：US11526073B2

公开(公告)日：2022-12-13

申请号：US17692912

申请日：2022-03-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po Hsuan Li ,  Yu-Ting Lin ,  Yun-Yue Lin ,  Huai-Tei Yang

IPC: G03F1/62 ,  G03F7/20

Abstract: A pellicle comprises a stress-controlled metal layer. The stress in said metal layer may be between about 500-50 MPa. A method of manufacturing a pellicle comprising a metal layer includes deposing said metal layer by plasma physical vapor deposition. Process parameters are selected so as to produce a desired stress value in said metal layer, such as between about 500-50 MPa.