公开(公告)号：US20230230993A1

公开(公告)日：2023-07-20

申请号：US17810498

申请日：2022-07-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming Chyi LIU ,  Jiech-Fun LU ,  Hung-Wen HSU

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14685 ,  H01L27/14634

Abstract: The present disclosure describes a semiconductor device having radiation-sensing regions separated by trench isolation structures. The semiconductor structure includes a first trench fill structure on a substrate and a second trench fill structure on the substrate. The first trench fill structure has a first width and a convex bottom surface. The second trench fill structure has a concave bottom surface and a second width greater than the first width.