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公开(公告)号：US20160276386A1
公开(公告)日：2016-09-22
申请号：US14658465
申请日：2015-03-16
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Hung-Wen HSU , Ching-Chung SU , Cheng-Hsien CHOU , Jiech-Fun LU , Shih-Pei CHOU , Yeur-Luen TU
IPC: H01L27/146
CPC classification number: H01L27/14623 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14687 , H01L27/14689
Abstract: An image sensor structure is provided. The image sensor device structure includes a substrate, and the substrate includes an array region and a peripheral region. The image sensor device structure includes an anti-reflection layer formed on the substrate and a buffer layer formed on the anti-reflection layer. The image sensor device structure includes a first etch stop layer formed on the buffer layer and a metal grid structure formed on the first etch stop layer. The image sensor device structure also includes a dielectric layer formed on the metal grid structure.
Abstract translation: 提供图像传感器结构。 图像传感器装置结构包括基板，并且基板包括阵列区域和外围区域。 图像传感器装置结构包括形成在基板上的防反射层和形成在抗反射层上的缓冲层。 图像传感器装置结构包括形成在缓冲层上的第一蚀刻停止层和形成在第一蚀刻停止层上的金属栅格结构。 图像传感器装置结构还包括形成在金属栅格结构上的电介质层。
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公开(公告)号：US20200066832A1
公开(公告)日：2020-02-27
申请号：US16665894
申请日：2019-10-28
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Yen-Shuo SU , Chun-Tsung KUO , Jiech-Fun LU
Abstract: A method includes depositing a magnetic layer over a dielectric layer, and etching a first portion of the magnetic layer, in which a second portion of the magnetic layer that is directly under the first portion of the magnetic layer remains over the dielectric layer after etching the first portion of the magnetic layer. The second portion of the magnetic layer is etched.
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公开(公告)号：US20190305026A1
公开(公告)日：2019-10-03
申请号：US16427484
申请日：2019-05-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tsun-Kai TSAO , Shih-Pei CHOU , Jiech-Fun LU
IPC: H01L27/146
Abstract: An FSI image sensor device structure is provided. The FSI image sensor device structure includes a pixel region formed in a substrate and a storage region formed in the substrate and adjacent to the pixel region. The FSI image sensor device structure further includes a first gate structure formed over the storage region and a metal shield structure formed over the first gate structure. The FSI image sensor device structure further includes a conductive structure formed adjacent to the first gate structure. In addition, the conductive structure is electrically connected to the metal shield structure through a via.
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Patent Agency Ranking
公开(公告)号：US20180286905A1
公开(公告)日：2018-10-04
申请号：US15644022
申请日：2017-07-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tsun-Kai TSAO , Shih-Pei CHOU , Jiech-Fun LU
IPC: H01L27/146
CPC classification number: H01L27/14623 , H01L27/14614 , H01L27/14621 , H01L27/14627 , H01L27/14685
Abstract: An FSI image sensor device structure is provided. The FSI image sensor device structure includes a pixel region formed in a substrate and a storage region formed in the substrate and adjacent to the pixel region. The FSI image sensor device structure includes a storage gate structure formed over the storage region, and the storage gate structure includes a top surface and sidewall surfaces. The FSI image sensor device structure includes a metal shield structure formed on the storage gate structure, and the top surface and the sidewall surfaces of the storage gate structure are covered by the metal shield structure.
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公开(公告)号：US20180286907A1
公开(公告)日：2018-10-04
申请号：US15476370
申请日：2017-03-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ching-Chung SU , Hung-Wen HSU , Wei-Chuang WU , Wei-Lin CHEN , Jiech-Fun LU
IPC: H01L27/146
CPC classification number: H01L33/46 , H01L27/14629 , H01L27/14643 , H01L27/14868 , H01L31/056
Abstract: Structures and formation methods of an image sensor structure are provided. The image sensor structure is provided. The image sensor structure includes a substrate, a photodiode component in the substrate, and a grid structure over the substrate. The grid structure includes a bottom dielectric element over the substrate, a reflective element over the bottom dielectric element, and an upper dielectric element over the reflective element. The reflective element has a sidewall which is anti-corrosive in a basic condition and an acidic condition. The image sensor structure also includes a color filter element over the substrate and surrounded by the grid structure. The color filter element is aligned with the photodiode component.
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公开(公告)号：US20230230993A1
公开(公告)日：2023-07-20
申请号：US17810498
申请日：2022-07-01
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ming Chyi LIU , Jiech-Fun LU , Hung-Wen HSU
IPC: H01L27/146
CPC classification number: H01L27/1463 , H01L27/14685 , H01L27/14634
Abstract: The present disclosure describes a semiconductor device having radiation-sensing regions separated by trench isolation structures. The semiconductor structure includes a first trench fill structure on a substrate and a second trench fill structure on the substrate. The first trench fill structure has a first width and a convex bottom surface. The second trench fill structure has a concave bottom surface and a second width greater than the first width.
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公开(公告)号：US20180166527A1
公开(公告)日：2018-06-14
申请号：US15880289
申请日：2018-01-25
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Yen-Shuo SU , Chun-Tsung KUO , Jiech-Fun LU
CPC classification number: H01L28/10 , H01F17/0033 , H01F41/046
Abstract: A method for fabricating a magnetic core includes depositing a magnetic layer on a dielectric layer, forming a first photoresist layer on the magnetic layer and patterning the first photoresist layer, etching the magnetic layer through the patterned first photoresist layer, in which a first section of the magnetic layer exposed by the first photoresist layer remains on the dielectric layer after the magnetic layer is etched, removing the patterned first photoresist layer, forming a second photoresist layer on the magnetic layer and patterning the second photoresist layer, etching the magnetic layer through the patterned second photoresist layer, and removing the second photoresist layer.
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公开(公告)号：US20160254342A1
公开(公告)日：2016-09-01
申请号：US14632519
申请日：2015-02-26
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Yen-Shuo SU , Chun-Tsung KUO , Jiech-Fun LU
IPC: H01L49/02 , H01L21/3213 , H01F27/24
CPC classification number: H01L28/10 , H01F17/0033 , H01F41/046
Abstract: A magnetic core includes a center section having a substantially uniform thickness, and an edge section connected to and surrounding the center section. The edge section includes a bottom portion and a top portion disposed on the bottom portion, in which the bottom portion has a gradual side surface since the top portion has a steep side surface. The profile of the magnetic core can be more rectangular thereby providing better inductor performance.
Abstract translation: 磁芯包括具有基本均匀厚度的中心部分，以及连接到中心部分并围绕中心部分的边缘部分。 边缘部分包括底部和设置在底部上的顶部，其中底部具有逐渐的侧表面，因为顶部具有陡峭的侧表面。 磁芯的轮廓可以更加矩形，从而提供更好的电感性能。
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