公开(公告)号：US20210082832A1

公开(公告)日：2021-03-18

申请号：US16573817

申请日：2019-09-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shin-Yi Yang ,  Yu-Chen Chan ,  Min-Han Lee ,  Hai-Ching Chen ,  Shau-Lin Shue

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768

Abstract: A semiconductor structure is provided. The semiconductor structure comprises a first conductive feature embedded within a first dielectric layer, a via disposed over the first conductive feature, a second conductive feature disposed over the via, and a graphene layer disposed over at least a portion of the first conductive feature. The via electrically couples the first conductive feature to the second conductive feature.