公开(公告)号：US20180161828A1

公开(公告)日：2018-06-14

申请号：US15490075

申请日：2017-04-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-An YANG ,  Hao-Ming CHANG ,  Shao-Chi WEI ,  Kuo-Chin LIN ,  Sheng-Chang HSU ,  Li-Chih LU ,  Cheng-Ming LIN

IPC: B08B3/08 ,  H01L21/02 ,  H01L21/027 ,  H01L21/66 ,  H01L21/67 ,  B08B3/10 ,  H04N5/33 ,  G01J5/10 ,  G01J5/00

CPC classification number: G01J5/0037 ,  G01J5/10 ,  G01J2005/0077 ,  G01J2005/0081 ,  G03F7/3021 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/67253 ,  H01L21/67288

Abstract: A method for processing a substrate is provided. The method includes supplying a first flow of a chemical solution into a processing chamber, configured to process the substrate, via a first dispensing nozzle. The method further includes producing a first thermal image of the first flow of the chemical solution. The method also includes performing an image analysis on the first thermal image. In addition, the method includes moving the substrate into the processing chamber when the result of the analysis of the first thermal image is within the allowable deviation from the baseline.