公开(公告)号：US20220328429A1

公开(公告)日：2022-10-13

申请号：US17468886

申请日：2021-09-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Chang CHEN ,  Kun-Hsiang Lin ,  Cheng-Chien Li

IPC: H01L23/58 ,  H01L23/48 ,  H01L21/768 ,  H01L23/528

Abstract: The present disclosure describes a semiconductor structure including a TSV in contact with a substrate and a metal ring structure laterally surrounding the TSV. The metal ring structure includes one or more metal rings arranged as a stack and one or more metal vias interposed between two adjacent metal rings of the one or more metal rings. The metal ring structure is electrically coupled to the substrate through one or more conductive structures.

公开(公告)号：US12136600B2

公开(公告)日：2024-11-05

申请号：US17468886

申请日：2021-09-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Chang Chen ,  Kun-Hsiang Lin ,  Cheng-Chien Li

IPC: H01L23/58 ,  H01L21/768 ,  H01L23/48 ,  H01L23/528

Abstract: The present disclosure describes a semiconductor structure including a TSV in contact with a substrate and a metal ring structure laterally surrounding the TSV. The metal ring structure includes one or more metal rings arranged as a stack and one or more metal vias interposed between two adjacent metal rings of the one or more metal rings. The metal ring structure is electrically coupled to the substrate through one or more conductive structures.